| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering |
| DUAN Li1**, GAO Wei2
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1School of Materials Science and Engineering, Chang'an University, Xi'an 710064
2Department of Chemical and Materials Engineering, The University of Auckland, Private Bag 92019, Auckland, New Zealand
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| Cite this article: |
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DUAN Li, GAO Wei 2011 Chin. Phys. Lett. 28 036105 |
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Abstract ZnO:Ag films were prepared by rf sputtering on Si substrates. A detailed study on as-grown and annealed films was carried out using x-ray diffraction (XRD). The results indicate that the film crystalline quality and the Ag doping efficiency were both influenced by oxygen in the sputtering and annealing atmosphere. The optimum conditions are found. Ultraviolet and green emissions of annealed ZnO:Ag films were observed at room temperature. Photoluminescence results show that oxygen in annealing atmosphere reduces the deep-level defects in ZnO:Ag and increases the film quality.
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| Keywords:
61.05.Cp
73.40.Lq
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Received: 08 February 2010
Published: 28 February 2011
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| PACS: |
61.05.cp
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(X-ray diffraction)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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