| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers |
| LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi
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State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084
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LV Wen-Bin, WANG Lai, WANG Jia-Xing et al 2011 Chin. Phys. Lett. 28 128101 |
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Abstract Single and dual layers of InGaN quantum dots (QDs) are grown by metal organic chemical vapor deposition. In the former, the density, average height and diameter of QDs are 1.3×109 cm−2, 0.93 nm and 65.1 nm, respectively. The latter is grown under the same conditions and possesses a 20 nm low-temperature grown GaN barrier between two layers. The density, average height and diameter of QDs in the upper layer are 2.6×1010 cm−2, 4.6 nm and 81.3 nm, respectively. Two reasons are proposed to explain the QD density increase in the upper layer. First, the strain accumulation in the upper layer is higher, leading to a stronger three-dimensional growth. Second, the GaN barrier beneath the upper layer is so rough it induces growth QDs.
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| Keywords:
81.15.Gh
68.37.Ma
78.55.Cr
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Received: 13 September 2011
Published: 29 November 2011
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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68.37.Ma
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(Scanning transmission electron microscopy (STEM))
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78.55.Cr
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(III-V semiconductors)
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