| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photovoltaic Behaviors in an Isotype n-TiO2/n-Si Heterojunction |
| FAN Hui-Jie1, ZHANG Hui-Qiang2, WU Jing-Jing1, WEN Zheng-Fang2, MA Feng-Ying3**
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1The First Affiliated Hospital of Zhengzhou University, Zhengzhou 450052
2Xinxiang Medical University, Xinxiang 453000
3School of Physical Engineering, Zhengzhou University, Zhengzhou 450001
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| Cite this article: |
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FAN Hui-Jie, ZHANG Hui-Qiang, WU Jing-Jing et al 2011 Chin. Phys. Lett. 28 127305 |
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Abstract An n-TiO2/n−Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n−Si substrates. Obvious photovoltaic behaviors are observed in this isotype heterojunction. The open circuit voltage and short circuit current of the heterojunction can reach 123 mV and 20 µA/cm2, respectively. The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction. The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.
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| Keywords:
73.40.Lq
85.60.Bt
88.05.Bc
88.40.hm
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Received: 01 January 1900
Published: 29 November 2011
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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88.05.Bc
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(Energy efficiency; definitions and standards)
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88.40.hm
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(Cost of production of solar cells)
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