| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photoresponse Properties of an n-ZnS/p-Si Heterojunction |
| HUANG Jian**, WANG Lin-Jun, TANG Ke, XU Run, ZHANG Ji-Jun, LU Xiong-Gang, XIA Yi-Ben
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School of Materials Science and Engineering, Shanghai University, Shanghai 200072
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| Cite this article: |
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HUANG Jian, WANG Lin-Jun, TANG Ke et al 2011 Chin. Phys. Lett. 28 127301 |
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Abstract An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method. The band gap of the ZnS film is about 3.63 eV. Current-voltage (I–V) characteristics of the ZnS/Si heterojunction are examined and the results show the distinct rectifying characteristics with a turn-on voltage of about 1.8 V. The UV (330 nm) and visible (450 nm) photoresponse properties of the heterojunction are also investigated, which demonstrates the potential of such an n-ZnS/p-Si heterojunction for detecting both UV and visible light.
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| Keywords:
73.40.Lq
78.20.-e
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Received: 18 April 2011
Published: 29 November 2011
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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