| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Rectifying the Current−Voltage Characteristics of a LiNbO3 Film/GaN Heterojunction |
| HAO Lan-Zhong1,2**, LIU Yun-Jie2, ZHU Jun1**, LEI Hua-Wei1, LIU Ying-Ying1, TANG Zheng-Yu1, ZHANG Ying1, ZHANG Wan-Li1, LI Yan-Rong1
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1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
2Faculty of Science, China University of Petroleum, Qingdao 266555
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| Cite this article: |
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HAO Lan-Zhong, LIU Yun-Jie, ZHU Jun et al 2011 Chin. Phys. Lett. 28 107703 |
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Abstract Epitaxial LiNbO3 (LNO) films are grown on n−type GaN semiconductor substrates, forming LNO/GaN p-n junctions. The current-voltage (I–V) and capacitance−voltage (C–V) characteristics of the junctions are studied. The I–V curve shows a clear rectifying property with a turn−on voltage of 2.4 V. For the forward voltages, the conduction mechanism transits from Schottky thermionic emission for low voltages to space-charge-limited current for large voltages. Reverse C–V characteristics exhibit a linear 1/C2 versus V plot, from which a built-in potential of 0.34 V is deduced. These results are explained using the energy-band structure of the LNO/GaN junction.
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| Keywords:
77.84.Ek
73.40.Ei
73.20.At
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Received: 19 February 2011
Published: 28 September 2011
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| PACS: |
77.84.Ek
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(Niobates and tantalates)
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73.40.Ei
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(Rectification)
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73.20.At
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(Surface states, band structure, electron density of states)
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