| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films |
| LIU Xiao-Bing1, MENG Jian-Wei1, JIANG An-Quan1**, WANG Jian-Lu2
|
1State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433
2National Laboratory Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
|
|
| Cite this article: |
|
LIU Xiao-Bing, MENG Jian-Wei, JIANG An-Quan et al 2011 Chin. Phys. Lett. 28 107702 |
|
|
|
|
Abstract The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene) thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer. We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization. Unexpectedly, the non-ferroelectric capacitance reduces by more than 71% with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization, which suggests the thickening of the above capacitive layers with enhanced domain switching speed.
|
| Keywords:
77.22.Ej
77.80.Fm
77.55.+f
|
|
|
Received: 07 June 2011
Published: 28 September 2011
|
|
|
|
|
|
|
|
[1] Asadi K et al 2008 Nature Mater. 7 547
[2] Nalwa H S 1995 Ferroelectric Polymers: Chemistry, Physics, Applications 1995 (New York: Marcel Dekker, Inc.) p 677
[3] Furukawa T 1989 Phase Transitions 18 143
[4] Furukawa T et al 2006 IEEE Trans. Dielect. Elect. Insulation 13 1120
[5] Zhang Q M et al 2001 J. Appl. Phys. 89 2613
[6] Ducharme S et al 2000 Phys. Rev. Lett. 84 175
[7] Vizdrik G et al 2003 Phys. Rev. B 68 094113
[8] Kliem H et al 2005 J. Phys. D: Appl. Phys. 38 1860
[9] Naber R C G et al 2006 J. Phys. D: Appl. Phys. 39 1984
[10] Jiang A Q et al 2007 J. Appl. Phys. 101 104105
[11] Jiang A Q et al 2008 J. Appl. Phys. 103 124112
[12] Jiang A Q et al 2009 Phys. Rev. B 80 024119
[13] So Y W et al 2005 Appl. Phys. Lett. 86 092905
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
