| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature |
| XU Jia-Xiong, YAO Ruo-He*, LIU Yu-Rong
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| School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640 |
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| Cite this article: |
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XU Jia-Xiong, YAO Ruo-He, LIU Yu-Rong 2011 Chin. Phys. Lett. 28 107304 |
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Abstract A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature. The structural and electrical properties of as−deposited FeSi2 thin films were investigated using x−ray diffraction, Raman scattering, resistivity, and carrier lifetime measurement. The FeSi2 thin film showed an amorphous phase with resistivity of 9.685 Ω⋅cm and carrier lifetime of 9.5 µs. The prototype ZnO:Al/amorphous−FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current−voltage characteristic. This propert was evaluated using the shunt resistance and diode ideal factor. The experimental results suggest that the amorphous-FeSi2 thin film has promising applications in heterojunction devices with low thermal budget and low product cost.
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| Keywords:
73.40.Lq
72.80.Ga
81.15.Cd
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Received: 20 July 2011
Published: 28 September 2011
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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72.80.Ga
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(Transition-metal compounds)
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81.15.Cd
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(Deposition by sputtering)
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