Chin. Phys. Lett.  2011, Vol. 28 Issue (1): 018501    DOI: 10.1088/0256-307X/28/1/018501
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
A Compact Spice Model with Verilog-A for Phase Change Memory
CAI Dao-Lin**, SONG Zhi-Tang, LI Xi, CHEN Hou-Peng, CHEN Xiao-Gang
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Cite this article:   
CAI Dao-Lin, SONG Zhi-Tang, LI Xi et al  2011 Chin. Phys. Lett. 28 018501
Download: PDF(518KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract A compact spice model of the phase change memory with the crystalline fraction as the switching by Verilog-A language is proposed and demonstrated. The model can simulate not only the resistance change by the different electrical pulse, but also the temperature profile and crystalline fraction during programming operation. The simulated resistance as a function of the amplitude of programming voltage pulses is in good agreement with the experimental data.
Keywords: 85.40.Bh      82.60.Fa      85.45.BZ     
Received: 02 April 2010      Published: 23 December 2010
PACS:  85.40.Bh (Computer-aided design of microcircuits; layout and modeling)  
  82.60.Fa (Heat capacities and heats of phase transitions)  
  85.45.Bz (Vacuum microelectronic device characterization, design, and modeling)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/28/1/018501       OR      https://cpl.iphy.ac.cn/Y2011/V28/I1/018501
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
CAI Dao-Lin
SONG Zhi-Tang
LI Xi
CHEN Hou-Peng
CHEN Xiao-Gang
[1] Lai S et al 2001 IEEE Int. Electron. Devices Meeting (Washington DC 3–5 December 2001) p 803
[2] Wang K et al 2004 J. Appl. Phys. 96 5557
[3] Kolobov A V et al 2004 Nature Mater. 3 703
[4] Sun Z M et al 2006 Phys. Rev. Lett. 96 055507
[5] Ding S et al 2008 Chin. Phys. Lett. 25 3815
[6] Cobley R A et al 2003 Proc. Inst. Electron. Engin.: Science, Measurement and Technology 150 237
[7] Fantini P et al 2006 IEEE Int. Simulation of Semiconductor Processes and Devices (Monterey, California, USA 6–8 September 2006) p 162
[8] Salamon D et al 2003 IEEE International Workshop on Memory Technology, Design, and Testing (San Jose 28–29 July 2003) p86
[9] Wei X Q et al 2006 IEEE Trans. Electron. Devices 53 56
[10] Ventrice D et al 2007 IEEE Electron. Device Lett. 28 973
[11] Ielmini D et al 2006 IEEE Int. Electron Devices Meeting (San Francisco 11–13 December 2006) p1
[12] Chen F et al 2008 Non-Volatile Memory Technology Symposium p 1
[13] Carslaw H S et al 1959 Conduction of Heat in Solids (Oxford: Clarendon) p 231
[14] Liu Y et al 2009 Jpn. J. Appl. Phys. 48 024502
Related articles from Frontiers Journals
[1] YANG Hao, ZHAO Bao-Sheng, SHENG Li-Zhi, LI Mei, YAN Qiu-Rong, LIU Yong-An. A Single Photon Counting Detector Based on One-Dimensional Vernier Anode[J]. Chin. Phys. Lett., 2010, 27(5): 018501
[2] LI Xi, SONG Zhi-Tang, CAI Dao-Lin, CHEN Xiao-Gang, JIA Xiao-Ling. An SPICE Model for PCM Based on Arrhenius Equation[J]. Chin. Phys. Lett., 2009, 26(12): 018501
[3] LI Jun, WANG Ru-Zhi, LAN Wei, ZHANG Xing-Wang, DUAN Zhi-Qiang, WANG Bo, YAN Hui. Enhancement of Field Emission Properties in La-Doped ZnO Films Prepared by Magnetron Sputtering[J]. Chin. Phys. Lett., 2008, 25(7): 018501
[4] MIAO Zhen-Hua, ZHAO Bao-Sheng, ZHANG Xing-Hua, LIU Yong-An. A Single Photon Imaging System Based on Wedge and Strip Anodes[J]. Chin. Phys. Lett., 2008, 25(7): 018501
[5] DING Sheng, SONG Zhi-Tang, LIU Bo, ZHU Min, CHEN Xiao-Gang, CHEN Yi-Feng, SHEN Ju, FU Cong, FENG Song-Lin. A 0.18-μm 3.3V 16k Bits 1R1T Phase Change Random Access Memory (PCRAM) Chip[J]. Chin. Phys. Lett., 2008, 25(10): 018501
Viewed
Full text


Abstract