| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Negative Bias Temperature Instability |
| CAO Yan-Rong1**, MA Xiao-Hua2, HAO Yue3, ZHU Min-Bo1, TIAN Wen-Chao1, ZHANG Yue3
|
1School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071
2School of Technical Physics, Xidian University, Xi'an 710071
3Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071
|
|
| Cite this article: |
|
CAO Yan-Rong, MA Xiao-Hua, HAO Yue et al 2011 Chin. Phys. Lett. 28 017301 |
|
|
|
|
Abstract Different phenomena are observed under negative gate voltage stress which is smaller than the previous degradation stress in PMOSFETs with different oxide thicknesses. We adopt the real time method to make a point of the drain current to study the degradation and recovery of negative bias temperature instability (NBTI). For the device with thin oxide, recovery phenomenon appears when smaller negative voltage stress was applied, due to the more influencing oxide charges detrapping effects than the interface states. For the device with thick oxide, not recovery but degradation phenomenon comes forth. As many charges are trapped in the deeper position and higher energy level in the oxide, these charges can not be detrapped. Therefore, the effect of the charge detrapping is smaller than that of the interface states in the thick oxide. The degradation presents itself during the 'recovery' time.
|
| Keywords:
73.40.Qv
85.30.Tv
|
|
|
Received: 03 August 2010
Published: 23 December 2010
|
|
| PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
85.30.Tv
|
(Field effect devices)
|
|
|
|
|
|
[1] Zhu S, Nakajima A, Ohashi T and Miyake H 2006 IEEE Trans. Electron. Devices 53 1805
[2] Mahapatra S, Kumar P B and Alam M A 2004 IEEE Trans. Electron. Devices 51 1371
[3] Jha N K and Rao V R 2005 IEEE Electron. Device Lett. 26 687
[4] Rashkeev S N, Fleetwood D M, Schrimpf R D and Pantelides S T 2001 IEEE Trans. Nucl. Sci 48 2086
[5] Yamamoto T, Uwasawa K I and Mogami T 1999 IEEE Trans. Electron. Devices 46 921
[6] Parthasarathy C R, Denais M, Huard V, Ribes G, Vincent E and Bravaix A 2006 IEEE International Reliability Physics Symposium Proceedings (San Jose, California 26–30 March 2006) 471
[7] Schroder D K and Babcock J A 2003 J. Appl. Phys. 94 1
[8] Zhu S, Nakajima A, Ohashi T and Miyake H 2006 J. Appl. Phys. 99 064510-1
[9] Rangan S, Neal M and Everett C C Y 2003 International Electron Devices Meeting (Washington DC 8–10 December 2003) 341
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
