| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate |
DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou |
| Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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DU Xiao-Zhang, LU Hai, CHEN Dun-Jun et al 2010 Chin. Phys. Lett. 27 088105 |
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Abstract We demonstrate an ultra-violet light-emitting diode (UV-LED) fabricated on a bulk GaN substrate with electroluminescence (EL) emission centered at about 340 nm. The UV-LED exhibits low reverse leakage current on the order of 10-9 A under -5 V at room temperature, which can be explained by the low defect density in the epi-structure. The evolution of EL spectra as a function of injection current levels reveals the improved heat dissipation of the LEDs with vertical geometry on the bulk GaN substrate. The unusual increase of EL intensity at elevated temperatures can be explained by thermally assisted p-dopant ionization.
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| Keywords:
81.05.Ea
85.60.Jb
81.15.Gh
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Received: 05 February 2010
Published: 28 July 2010
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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85.60.Jb
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(Light-emitting devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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