| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of CO2 Addition on Preparation of Diamond Films by Direct-Current Hot-Cathode Plasma Chemical Vapor Deposition Method |
ZHANG Chun-Mei1, ZHENG Yan-Bin2, JIANG Zhi-Gang2, LV Xian-Yi2, HOU Xue2, HU Shuang2, LIU Jun-Wei2 |
| 1Department of Foundation, Jilin Business and Technology College, Changchun 130062 2State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 |
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| Cite this article: |
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ZHANG Chun-Mei, ZHENG Yan-Bin, JIANG Zhi-Gang et al 2010 Chin. Phys. Lett. 27 088103 |
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Abstract Diamond films are deposited on Mo substrates by dc hot-cathode plasma chemical vapor deposition method using a CH4-H2-CO2 gas mixture. Adjusting the flow of CO2, we study the relevant influence on surface morphology, grain orientation and crystalline quality of films with scanning electron microscopy, x-ray diffraction, Raman spectroscopy, respectively. The results show that grain orientation of the films has a transition with the increasing CO2 addition, from (100) orientation to (110) orientation and then (111) orientation. The crystalline quality is improved but the growth rate is decreased by raising the flow of CO2. The experimental results are also discussed briefly.
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| Keywords:
81.15.Gh
81.05.Ug
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Received: 19 March 2010
Published: 28 July 2010
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.ug
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(Diamond)
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