Chin. Phys. Lett.  2010, Vol. 27 Issue (8): 087701    DOI: 10.1088/0256-307X/27/8/087701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Temperature- and Frequency-Dependent Dielectric Properties of La1.5Sr0.5NiO4-δ

MA Yong-Chang1,2, ZHANG Jian-Zhu1, ZHAO Jie3, LIU Qing-Suo1

1School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 2Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin University of Technology, Tianjin 300384 3Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin 300384
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MA Yong-Chang, ZHANG Jian-Zhu, ZHAO Jie et al  2010 Chin. Phys. Lett. 27 087701
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Abstract

We report the temperature-dependent resistivity and dielectric function (1 kHz~3 MHz) of a charge ordering system La1.5Sr0.5NiO4-δ The primary data of ac impedance was measured by a four-terminal pair arrangement. Above 180 K, the resistivity is independent of frequency. At lower temperatures, the dielectric function could not be fitted by a Debye model with a single relaxation time, it should have a distribution. At T=130 K, there is a sudden increase in the ρ-T relation, meanwhile an anomaly dielectric response occurs on the temperature dependant dielectric spectrum in the whole measured frequency range, in which the dielectric constant has a high value even at high frequency region. Our analysis suggests that the current system would be more consistent with the Zener polaron model.

Keywords: 77.84.Bw      77.22.Ch      72.20.Jv     
Received: 09 December 2009      Published: 28 July 2010
PACS:  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
  77.22.Ch (Permittivity (dielectric function))  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/8/087701       OR      https://cpl.iphy.ac.cn/Y2010/V27/I8/087701
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MA Yong-Chang
ZHANG Jian-Zhu
ZHAO Jie
LIU Qing-Suo
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