Chin. Phys. Lett.  2010, Vol. 27 Issue (8): 087501    DOI: 10.1088/0256-307X/27/8/087501
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Observation of Room Ferromagnetism in Cu-Implanted Crystal ZnO

LI Tian-Jing1, LI Gong-Ping1, GAO Xing-Xin1, CHEN Jing-Sheng2

1School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 2Department of Material Science and Engineering, National University Singapore, Singapore 119260, Singapore
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LI Tian-Jing, LI Gong-Ping, GAO Xing-Xin et al  2010 Chin. Phys. Lett. 27 087501
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Abstract

Ion implantation technique is used to study the magnetic properties of Cu-doped ZnO. The room temperature ferromagnetism in the Cu-implanted ZnO samples is observed. From the photoluminescence spectrum of implanted samples we observe a broad green emission around 510 nm, which is related to defects in the samples. X-ray photoelectron spectroscopy measurement shows that Cu ions are in the mixed oxidation state of +1 or +2 and substitute for the Zn2+ ions of the ZnO matrix. We argue that the ferromagnetism is related to these defects, and the substitution of Cu2+ into Zn2+ sites in crystal ZnO could contribute to the observed ferromagnetism.

Keywords: 75.50.Pp      61.72.Uj     
Received: 25 January 2010      Published: 28 July 2010
PACS:  75.50.Pp (Magnetic semiconductors)  
  61.72.uj (III-V and II-VI semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/8/087501       OR      https://cpl.iphy.ac.cn/Y2010/V27/I8/087501
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LI Tian-Jing
LI Gong-Ping
GAO Xing-Xin
CHEN Jing-Sheng
[1] Dietl T 2000 Science 287 1019
[2] Sato K 2000 Jpn. J. Appl. Phys. II 39(6B) 555
[3] Ueda K et al 2001 Appl. Phys. Lett. 79 988
[4] Saeki H 2001 Solid State Commun. 120 439
[5] Peng L et al 2008 Chin. Phys. Lett. 25 1438
[6] Zhou S M et al 2008 Chin. Phys. Lett. 25 4446
[7] Han S J 2002 Appl. Phys. Lett. 81 4212
[8] Selvaraj V and Ohashi N 2007 J. Appl. Phys. 102 014905
[9] Cho Y M et al 2002 Appl. Phys. Lett. 80 3358
[10] Deng J X, Yan S S and Mei L M 2009 Chin. Phys. Lett. 26 027502
[11] Ramachandran S, Tiwari A and Narayan J 2004 Appl. Phys. Lett. 84 5255
[12] Manivannan A et al 2006 J. Appl. Phys. 99 08M110
[13] Maensiri S, Laokul P and Phokha S 2006 J. Magn. Magn. Mater. 305 381
[14] Deka S 2006 Appl. Phys. Lett. 89 032508
[15] Hays J, Thurber A, Reddy K M and Punnoose A 2006 J. Appl. Phys. 99 08M123
[16] Park J H and M Kim G 2004 J. Phys.: Condens. Matter 19 266203
[17] Park M S and Min B I 2003 Phys. Rev. B 68 224436
[18] Chien C H, Chiou S H and Gao G Y 2006 J. Magn. Magn. Mater. 305 275
[19] Huang D et al 2008 Appl. Phys. Lett. 92 182509
[20] Ando K, Saito H and Fukumura T 2001 J. Appl. Phys. 89 7284
[21] Lee H J, Kim B S and Cho C R 2004 Phys. Status Solid B 241 1533
[22] Buchholz D B, Chang R P and Song J H 2005 Appl. Phys. Lett. 87 082504
[23] Ye L H, Freeman A J and Delley B 2006 Phys. Rev. B 73 033203
[24] Shuai M, Liao L and Lu H B 2008 J. Phys. D: Appl. Phys. 41 135010
[25] Norton D P, overberg M E and Pearton S J 2003 Appl. Phys. Lett. 83 5488
[26] Zhou S Q et al 2008 Phys. Rev. B 77 035209
[27] Zhang B, Wei S H and Zunger A 2001 Phys. Rev. B 63 75205
[28] Garces N Y, Wang L, Bai L and Giles N C 2002 Appl. Phys. Lett. 81 622
[29] Mo C M, Li Y H, Liu Y S and Zhang Y 1998 J. Appl. Phys. 83 4389
[30] Lin B and Fu Z 2001 Appl. Phys. Lett. 79 943
[31] Venkatesan M et a 2004 Phys. Rev. Lett. 93 177206
[32] Hsu H S and Huang J C 2006 Appl. Phys. Lett. 88 242507
[33] Lee J H and Choi I H 2007 Appl. Phys. Lett. 90 0302504
[34] Shuai M, Liao L and Lu H B 2008 J. Phys. D: Appl. Phys. 41 135010
[35] Tiwari A and Snure M 2008 Appl. Phys. Lett. 92 062509
[36] Feng X 2004 J. Phys.: Condens. Matter 16 4251
[37] Herng T S et al 2006 J. Appl. Phys. 99 086101
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