| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment |
ZHANG Xian-Gao1, CHEN Kun-Ji1, FANG Zhong-Hui1, QIAN Xin-Ye1, LIU Guang-Yuan1, JIANG Xiao-Fan1, MA Zhong-Yuan1, XU Jun1, HUANG Xin-Fan1, JI Jian-Xin2, HE Fei2, SONG Kuang-Bao2, ZHANG Jun2, WAN Hui2, WANG Rong-Hua2 |
| 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 2Wuxi China Resources Huajing Micro Electronics Co. Ltd., Wuxi 214061 |
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| Cite this article: |
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ZHANG Xian-Gao, CHEN Kun-Ji, FANG Zhong-Hui et al 2010 Chin. Phys. Lett. 27 087301 |
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Abstract
A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density (3×1011 cm-2) were deposited on ultra-thin tunnel oxide layer (~ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate.
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Received: 24 February 2010
Published: 28 July 2010
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