| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection |
WANG Guo-Wei1, XU Ying-Qiang1, GUO Jie2, TANG Bao1, REN Zheng-Wei1, HE Zhen-Hong1, NIU Zhi-Chuan1 |
| 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Luoyang Opti-electronics Development Center, Luoyang 471009 |
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| Cite this article: |
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WANG Guo-Wei, XU Ying-Qiang, GUO Jie et al 2010 Chin. Phys. Lett. 27 077305 |
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Abstract InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0μm at 77 K, the peak directivity of the detectors is 1.6× 1010 cm·Hz1/2W-1 at 77 K.
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| Keywords:
73.21.Cd
78.20.Bh
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Received: 28 January 2010
Published: 28 June 2010
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| PACS: |
73.21.Cd
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(Superlattices)
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78.20.Bh
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(Theory, models, and numerical simulation)
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