| PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
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Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation |
LIU Cheng-Sen1, WANG De-Zhen2, FAN Yu-Jia1, ZHANG Nan1, GUAN Li1, YAO Yuan1 |
| 1College of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 2State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 |
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| Cite this article: |
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LIU Cheng-Sen, WANG De-Zhen, FAN Yu-Jia et al 2010 Chin. Phys. Lett. 27 075201 |
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Abstract A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally.
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| Keywords:
52.77.Dq
52.65.Rr
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Received: 06 July 2009
Published: 28 June 2010
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| PACS: |
52.77.Dq
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(Plasma-based ion implantation and deposition)
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52.65.Rr
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(Particle-in-cell method)
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