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Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating |
LI Zhi-Ming, HAO Yue, ZHANG Jin-Cheng, CHEN Chi, CHANG Yong-Ming, XU Sheng-Rui, BI Zhi-Wei |
| School of Microelectronics, Xidian University, Xi'an 710071 Key Laboratary of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 |
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| Cite this article: |
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LI Zhi-Ming, HAO Yue, ZHANG Jin-Cheng et al 2010 Chin. Phys. Lett. 27 070701 |
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Abstract A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth.
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| Keywords:
07.05.Tp
07.20.Hy
02.70.Dh
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Received: 30 March 2010
Published: 28 June 2010
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| PACS: |
07.05.Tp
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(Computer modeling and simulation)
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07.20.Hy
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(Furnaces; heaters)
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02.70.Dh
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(Finite-element and Galerkin methods)
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