| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Methods for Thickness Determination of SiC Homoepilayers by Using Infrared Reflectance Spectroscopy |
LI Zhi-Yun, SUN Ji-Wei, ZHANG Yu-Ming, ZHANG Yi-Men, TANG Xiao-Yan |
| Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 |
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| Cite this article: |
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LI Zhi-Yun, SUN Ji-Wei, ZHANG Yu-Ming et al 2010 Chin. Phys. Lett. 27 068103 |
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Abstract Infrared reflectance spectra have been widely used to measure layer thickness based either on calculation or on curve fitting, and two traditional methods for thickness determination have been studied. Considering the disadvantages of those two methods, we propose a new fitting model based on the fitting of the fringe order difference. In comparison with the measured results, the new fitting model shows its superiority not only for its stable and accurate results which have great agreement with the results from SEM, but also for its simple and quick fitting process.
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| Keywords:
81.05.Hd
81.70.Fy
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Received: 29 October 2009
Published: 25 May 2010
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| PACS: |
81.05.Hd
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(Other semiconductors)
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81.70.Fy
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(Nondestructive testing: optical methods)
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