| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Annealing Effect on Photovoltages of Quartz Single Crystals |
| TIAN Lu1,2, ZHAO Song-Qing1, ZHAO Kun1,2,3** |
1State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249
2Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249
3International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016
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| Cite this article: |
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TIAN Lu, ZHAO Song-Qing, ZHAO Kun 2010 Chin. Phys. Lett. 27 127301 |
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Abstract We investigate the photovoltaic effects of quartz single crystals annealed at high temperatures in ambient atmosphere. The open-circuit photovoltages and surface morphologies strongly depend on the heating treatments. When the annealing temperature increases from room temperature to 900°C, the rms roughness of quartz single crystal wafers increases from 0.207 to 1.011 nm. In addition, the photovoltages decrease from 1.994 μV at room temperature to 1.551 μV after treated at 500°C, and then increase up to 9.8 μV after annealed at 900°C. The inner mechanism of the present photovoltaic response and surface morphologies is discussed.
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| Keywords:
73.50.Pz
42.70.Ce
72.40.+W
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Received: 10 June 2010
Published: 23 November 2010
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| PACS: |
73.50.Pz
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(Photoconduction and photovoltaic effects)
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42.70.Ce
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(Glasses, quartz)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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