| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly(3-Hexylthiophene) Thin Films |
| MA Liang** |
Department of Chemistry and Chemical Engineering, Minjiang University, Fuzhou 350108
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| Cite this article: |
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MA Liang 2010 Chin. Phys. Lett. 27 117301 |
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Abstract Effects of dopant properties on microstructures and the electrical characteristics of poly (3-hexylthiophene) (P3HT) films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4−TCNQ), 6,6-phenyl-C61butyric acid methyl ester (PCBM) and N,N'−Diphenyl-N,N'-(m-tolyl)-benzidine (TPD) into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants.
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| Keywords:
73.50.-h
73.61.Ph
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Received: 06 May 2010
Published: 22 October 2010
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| PACS: |
73.50.-h
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(Electronic transport phenomena in thin films)
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73.61.Ph
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(Polymers; organic compounds)
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