| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Electrical Property of Infrared-Sensitive InAs Solar Cells |
| DENG Hui-Yong**, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning*** |
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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| Cite this article: |
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DENG Hui-Yong, WANG Qi-Wei, TAO Jun-Chao et al 2010 Chin. Phys. Lett. 27 114206 |
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Abstract InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p−n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.
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| Keywords:
42.79.Ek
89.30.Cc
73.40.Kp
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Received: 13 May 2010
Published: 22 October 2010
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| PACS: |
42.79.Ek
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(Solar collectors and concentrators)
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89.30.Cc
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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