| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming |
| CHEN Yi-Feng, SONG Zhi-Tang, CHEN Xiao-Gang, LIU Bo, XU Cheng, FENG Gao-Ming, WANG Liang-Yong, ZHONG Min, FENG Song-Lin |
| State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences Shanghai 200050 |
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| Cite this article: |
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CHEN Yi-Feng, SONG Zhi-Tang, CHEN Xiao-Gang et al 2010 Chin. Phys. Lett. 27 107302 |
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Abstract A phase change memory (PCM) device, based on the Ge2Sb2Te5 (GST) material, is fabricated using the standard 0.18−μm CMOS technology. After serials of detailed experiments on the phase transition behaviors, we find that the RESET process is strongly dependent on the state of the inactive area and the active area affects the SET process dramatically. By applying a 5−mA current-voltage (I-V) sweep as initial operation, we can reduce the voltage drop beyond the active area during the RESET process and the overall RESET voltage decreases from 3 V plus to 2.5 V. For the SET operation, a non−cumulative programming method is introduced to eliminate the impact of randomly formed amorphous active area, which is strongly related to the threshold switching process and SET voltage. Combining the two methods, the endurance performance of the PCM device has been remarkably improved beyond 1×106 cycles.
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| Keywords:
73.61.Jc
61.72.Uj
87.15.Zg
85.30.Tv
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Received: 12 April 2010
Published: 26 September 2010
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