| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell |
| XUE Jun-Jun, CHEN Dun-Jun, LIU Bin, XIE Zi-Li, JIANG Ruo-Lian, ZHANG Rong, ZHENG You-Dou |
| Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructure, Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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XUE Jun-Jun, CHEN Dun-Jun, LIU Bin et al 2009 Chin. Phys. Lett. 26 098102 |
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Abstract A patterned Au/Pt/In0.2Ga0.8N/GaN heterostructure Schottky prototype solar cell is fabricated. The forward current-voltage characteristics indicate that thermionic emission is a dominant current transport mechanism at the Pt/InGaN interface in our fabricated cell. The Schottky solar cell has an open-circuit voltage of 0.91V, short-circuit current density of 7mA/cm2, and fill factor of 0.45 when illuminated by a Xe lamp with a power density of 300mW/cm2. It exhibits a higher short-circuit current density of 30mA/cm2 and an external quantum efficiency of over 25% when illuminated by a 20-mW-power He-Cd laser.
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| Keywords:
81.05.Ea
85.30.De
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Received: 11 June 2009
Published: 28 August 2009
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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