FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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All-Solid-State Nd:YAG Laser Operating at 1064nm and 1319nm under 885nm Thermally Boosted Pumping |
DING Xin1,2, CHEN Na1,2, SHENG Quan1,2, YU Xuan-Yi3, XU Xiao-Yan1,2, WEN Wu-Qi1,2, ZHOU Rui1,2, WANG Peng1,2, YAO Jian-Quan1,2 |
1College of Precision Instrument and Opto-Electronics Engineering, Institute of Laser and Opto-Electronics, Tianjin University, Tianjin 3000722Key Laboratory of Opto-Electronics Information Science and Technology (Ministry of Education), Tianjin University, Tianjin 3000723College of Physics Science, Photonics Research Center, Nankai University, Tianjin 300071 |
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Cite this article: |
DING Xin, CHEN Na, SHENG Quan et al 2009 Chin. Phys. Lett. 26 094207 |
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Abstract We report a high-efficiency Nd:YAG laser operating at 1064nm and 1319nm, respectively, thermally boosted pumped by an all-solid-state Q-switched Ti:sapphire laser at 885nm. The maximum outputs of 825.4mW and 459.4mW, at 1064nm and 1319nm respectively, are obtained in a 8-mm-thick 1.1at.% Nd:YAG crystal with 2.1W of incident pump power at 885nm, leading to a high slope efficiency with respect to the absorbed pump power of 68.5% and 42.0%. Comparative results obtained by the traditional pumping at 808nm are presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power at 1064nm under the 885nm pumping are 12.2% higher and 7.3% lower than those of 808nm pumping. At 1319nm, the slope efficiency and the threshold with respect to the absorbed pump power under 885nm pumping are 9.9% higher and 3.5% lower than those of 808nm pumping. The heat generation operating at 1064nm and 1319nm is reduced by 19.8% and 11.1%, respectively.
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Keywords:
42.55.Rz
42.60.Ry
42.60.Lh
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Received: 09 March 2009
Published: 28 August 2009
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PACS: |
42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.60.Ry
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42.60.Lh
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(Efficiency, stability, gain, and other operational parameters)
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