Growth and Characteristics of Epitaxial Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N by MOCVD

doi:10.1088/0256-307X/26/6/068101

Chin. Phys. Lett.

2009, Vol. 26

Issue (6): 068101 DOI: 10.1088/0256-307X/26/6/068101

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Growth and Characteristics of Epitaxial Al_xGa_1-xN by MOCVD

ZHANG Jie, GUO Li-Wei, CHEN Yao, XU Pei-Qiang, DING Guo-Jian, PENG
Ming-Zeng, JIA Hai-Qiang, ZHOU Jun-Ming, CHEN Hong

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190

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ZHANG Jie, GUO Li-Wei, CHEN Yao et al 2009 Chin. Phys. Lett. 26 068101

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Abstract Al_xGa_1-xN epilayers with a wide Al composition range (0.2≤x≤ 0.68) were grown on AlN/sapphire templates by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). X-ray diffraction results reveal that both the (0002) and (10^-15) full widths at half-maximum (FWHM) of the Al_xGa_1-xN epilayer decrease with increasing Al composition due to the smaller lattice mismatch to the AlN template. However, the surface morphology becomes rougher with increasing Al composition due to the weak migration ability of Al atoms. Low temperature photoluminescence (PL) spectra show pronounced near band edge (NBE) emission and the NBE FWHM becomes broader with increasing Al composition mainly caused by alloy disorder. Meanwhile, possible causes of the low energy peaks in the PL spectra are discussed.

Keywords: 81.05.Ea 81.15.Gh 61.05.Cp

Received: 04 January 2009 Published: 01 June 2009

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	61.05.cp	(X-ray diffraction)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/6/068101 OR https://cpl.iphy.ac.cn/Y2009/V26/I6/068101

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	ZHANG Jie
	GUO Li-Wei
	CHEN Yao
	XU Pei-Qiang
	DING Guo-Jian
	PENGMing-Zeng
	JIA Hai-Qiang
	ZHOU Jun-Ming
	CHEN Hong

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