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Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage |
| Alireza Kargar |
| Department of Electrical and Computer Engineering, Shiraz University, Shiraz 7134851156, Iran |
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| Cite this article: |
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Alireza Kargar 2009 Chin. Phys. Lett. 26 060701 |
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Abstract A silicon nanowire (Si-NW) sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscale side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.
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07.07.Df
85.35.-p
85.30.Tv
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Received: 18 February 2009
Published: 01 June 2009
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| PACS: |
07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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85.35.-p
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(Nanoelectronic devices)
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85.30.Tv
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(Field effect devices)
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