| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness |
| YANG Hong-Bin, ZHANG Xiang-Jiu |
| Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 |
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| Cite this article: |
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YANG Hong-Bin, ZHANG Xiang-Jiu 2009 Chin. Phys. Lett. 26 048103 |
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Abstract By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.
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| Keywords:
81.15.Hi
61.72.Ff
78.30.Er
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Received: 13 November 2008
Published: 25 March 2009
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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78.30.Er
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(Solid metals and alloys ?)
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