| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy |
| GUO Jie1,2, SUN Wei-Guo2, PENG Zhen-Yu2, ZHOU Zhi-Qiang3, XU Ying-Qiang2, NIU Zhi-Chuan3 |
| 1Material School, NorthWest Polytechnical University, Xi'an 7100002Luoyang Optical Electronic Center, PO Box 030, Luoyang 4710093Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
|
| Cite this article: |
|
GUO Jie, SUN Wei-Guo, PENG Zhen-Yu et al 2009 Chin. Phys. Lett. 26 047802 |
|
|
|
|
Abstract Short period InAs(4ML)/GaSb(8ML) superlattices (SLs) with InSb- and mixed-like (or Ga1-xInxAs1-ySby-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.
|
| Keywords:
78.67.Pt
85.60.Gz
81.15.Hi
81.05.Ea
|
|
|
Received: 17 July 2008
Published: 25 March 2009
|
|
| PACS: |
78.67.Pt
|
(Multilayers; superlattices; photonic structures; metamaterials)
|
| |
85.60.Gz
|
(Photodetectors (including infrared and CCD detectors))
|
| |
81.15.Hi
|
(Molecular, atomic, ion, and chemical beam epitaxy)
|
| |
81.05.Ea
|
(III-V semiconductors)
|
|
|
|
|
|
[1] Tian Z B, Gu Y, Wang K and Zhang Y G 2008 Chin. Phys.Lett. 26 2292
[2] Zhang Y G, Hao G Q, Gu Y, Zhu C, LI A Z and Liu T D 2005 Chin. Phys. Lett. 22 250
[3] Fuchs F, Weimar U, Pletschen W, Schmitz J, Ahlswede E,Walther M, Wagner J and Koidl P 1997 Appl. Phys. Lett. 71 3251
[4] Rogalski A, Martyniuk P 2006 Infrared Phys. Technol. 48 39
[5] Herres N, Fuchs F, Schmitz J, Pavlov K M, Wagner J,Ralston J D and Koidl P 1996 Phys. Rev. B 53 15688
[6] Tomich D H, Mitchel W C, Chow P and Tu C W 1999 J.Cryst. Growth. 210 868
[7] Bracker A S, Yang M J, Bennett B R, Culbertson J C andMoore W J 2000 J. Crystal Growth 220 384
[8] Chow D H, Miles R H and Hunter A T 1992 J. Vac. Sci.Technol. B 10 888
[9] Waterman J R, Shanabrook B V, Wagner R J, Yang M J, DavisJ L and Omaggio J P 1993 Semicond. Sci. Technol. 8 106
[10] Canedy C L, W Bewley W, Kim C S, Kim M, Vurgaftman I andMeyer J R 2003 J. Appl. Phys. 94 1347 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
