CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy |
HAO Xiao-Peng1, ZHOU Chun-Lan3, WANG Bao-Yi2, WEI Long2 |
1Division of Thermometry and Material Evaluation, National Institute of Metrology, Beijing 1000132Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000493Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 |
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Cite this article: |
HAO Xiao-Peng, ZHOU Chun-Lan, WANG Bao-Yi et al 2009 Chin. Phys. Lett. 26 046101 |
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Abstract Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The negatively charge point defects (probably Pb centres or peroxy radicals) at the silicon nanocluster (nc-Si)/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and O atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum.
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Keywords:
61.10.Nz
61.46.Bc
78.70.Bj
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Received: 05 January 2009
Published: 25 March 2009
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PACS: |
61.10.Nz
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61.46.Bc
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(Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate))
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78.70.Bj
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(Positron annihilation)
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[1] Fowler A 1997 Phys. Today 57 50 [2] Hirschman K D, Tsybeskov L, Duttagupta S P and Fauchet P M1996 Nature 384 338 [3] Fujinami M and Chilton N B 1994 Appl. Phys. Lett. 64 2806 [4] Hao X P, Yu R S, Wang B Y, Chen H L, Wang D N, Ma C X andWei L 2007 Appl. Surf. Sci. 253 6868 [5] Nesbit L A 1985 Appl. Phys. Lett. 46 38 [6] Pi X D, Coleman P G, Harding R, Davies G and Gwilliam R M2004 J. Appl. Phys. 95 8155 [7] Crist V 1999 Handbook of Monochromatic XPS Spectra(Los Altos, CA: XPS International Inc.) vol 1 [8] Ehara T and Machida S 1999 Thin Solid Films 346 275 [9] van Veen A, Schut H, de Vries J, Hakvoort P A and Ijpma MR 1990 AIP Conf. Proc. 218 29 [10] Uedono A, Wei L, Tanigawa S, Suzuki R, Ohgaki H andMikado T 1994 J. Appl. Phys. 75 216 [11] Fujinami M, Miyagoe T, Sawada T, Suzuki R, Ohdaira T andAkahane T 2004 J. Appl. Phys. 95 3404 [12] Tang Z, Nonaka T, Nagai Y and Hasegawa M 2001 Mat.Sci. Forum 363 67 [13] Schultz P J, Tandberg E, Lynn K G, Nielsen B, Jackman TE, Denhoff M W and Aers G C 1988 Phys. Rev. Lett. 61 187 [14] van Huis M A, Van Veen A, Schut H, Falub C V, Eijt S W Hand Mijnarends P E 2002 Phys. Rev. B 65 085416 [15] Gerardi G J, Poindexter E H, Caplan P J and Johnson N M1986 Appl. Phys. Lett. 49 348 [16] Fujinami M and Chilton N B 1993 Appl. Phys. Lett. 62 1131 [17] Au H L, Asoka-Kumar P, Nielsen B and Lynn K G 1993 J. Appl. Phys. 73 2972 |
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