| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector |
| MIAO Feng-Juan1, ZHANG Jie1, XU Shao-Hui1, WANG Lian-Wei1, CHU Jun-Hao1, CAO Zhi-Shen2, ZHAN Peng2, WANG Zhen-Lin2 |
| 1Key Laboratory of Polar Materials and Devices of Ministry of Education, and Department of Electronic Engineering, East China Normal University, Shanghai 2002412National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093 |
|
| Cite this article: |
|
MIAO Feng-Juan, ZHANG Jie, XU Shao-Hui et al 2009 Chin. Phys. Lett. 26 044207 |
|
|
|
|
Abstract With the aid of photolithography, an array of one-dimensional porous silicon photonic crystal reflector islands for a far infrared image detector ranging from 10μm to 14μm is successfully fabricated. Silicon nitride formed by low pressure chemical vapor deposition (LPCVD) was used as the masking layer for the island array formation. After etching, the microstructures were examined by a scanning electron microscope and the optical properties were studied by Fourier transform infrared spectroscopy, the result indicates that the multilayer structure could be obtained in the perpendicular direction via periodically alternative etching current in each pre-pattern. At the same time, the island array has a well-proportioned lateral etching effect, which is very useful for the thermal isolation in lateral orientation of the application in devices. It is concluded that regardless of the absorption of the deposition layer on the substrate, the localized photonic crystalline islands have higher reflectivity. The designed islands structure not only prevents the cracking of the porous silicon layers but is also useful for the application in the cold part for the sensor devices and the interconnection of each pixel.
|
| Keywords:
42.70.Qs
85.85.+j
78.67.Pt
|
|
|
Received: 03 December 2008
Published: 25 March 2009
|
|
| PACS: |
42.70.Qs
|
(Photonic bandgap materials)
|
| |
85.85.+j
|
(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)
|
| |
78.67.Pt
|
(Multilayers; superlattices; photonic structures; metamaterials)
|
|
|
|
|
|
[1] Kaltsas G and Nassiopoulou A G 1999 SensorsActuators A 76 133
[2] Roussel Ph, Lysenko V, Remaki B, Delhomme G., Dittmar Aand Barbier D 1999 Sensors Actuators A 74 100
[3] Hu M, Wu M, Lu Y Q, Dou Y W and Cu M 2007 Surf. Coat.Technol. 201 4858
[4] Lysenko V, Perichon S, Remaki B and Barbier D 2002 Sensors Actuators A 99 13
[5] Kochergin V and Foell H 2006 Mater. Sci.Engin. R 52 93
[6] Huanca D R, Ramirez-Fernandez F J, Salcedo and W J 2008 Microelectron. J. 39 499
[7] Kawamura Y L, Fukami K, Sakka T and Ogata Y H 2008 Electrochem. Commun. 10 346
[8] Chang C C and Tang C S 1998 Sensors Actuators A 65 171
[9] Zhang J, Xu S H, Yang S Q, Wang L W, Cao Z S, Zhan P andWang Z L 2008 Chin. Phys. Lett. 25 1317
[10] Wang Z J, Zhang J, Xu S H,, Wang L W, Cao Z S, Zhan P andWang Z L 2007 J. Phys. D: Appl. Phys. 40 4482
[11] Qian M., Bao X Q, Wang L W, Lu X, Shao J and Chen X S2006 J. Cryst. Growth. 292 347
[12] Guendouz M, Joubert P and Sarret M 2000 Mater. Sci.Engin. B 69/70 43
[13] Hou X Y, Fan H L, Xu L, Zhang F L, Yu M R and Wang X 1996 Appl. Phys. Lett. 68 2323
[14] Smith D L, Alimonda A S, Chen C C, Ready S E and Wacker B1990 J. Electrochem. Soc. 137 614
[15] Liao W S and Lee S C 1997 J. Electrochem. Soc. 144 1477
[16] Rocheleau R E and Zhang Z 1992 Thin Solid Films 220 739
[17] Molinari M, Rinnert H and Vergnat M 2001 Appl. Phys.Lett. 79 2172
[18] Pandey R K, Patil L S, Bange Jaspal P and Gautam D K 2004 Opt. Mater. 27 139 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
