| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High-Current Multi-Finger Mesa InGaAs/InP DHBTs |
| JIN Zhi1, CHENG Wei1, SU Yong-Bo1, LIU Xin-Yu1, XU An-Huai2, QI Ming2 |
| 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Laboratory of Functional Materials for Information, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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JIN Zhi, CHENG Wei, SU Yong-Bo et al 2009 Chin. Phys. Lett. 26 128502 |
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Abstract Characteristics of single- and multi-finger mesa InGaAs/InP double heterojunction bipolar transistors (DHBTs) are compared. The current gain decreases with the increasing number nf of the emitter fingers due to the mutual thermal interaction between the fingers. The Kirk current can be as high as 150mA for four-finger DHBT. No degradation of the peak of the current gain cutoff frequency ft is found for multi-finger DHBTs. The peak of the maximum oscillation frequency fmax decreases with an increase of nf due to the increasing parasitic resistance of the base. The results are very helpful for applications of the common-base DHBTs in power amplifiers operating at very high frequencies.
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| Keywords:
85.30.Pq
71.55.Eq
79.60.Jv
73.20.At
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Received: 18 March 2009
Published: 27 November 2009
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| PACS: |
85.30.Pq
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(Bipolar transistors)
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71.55.Eq
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(III-V semiconductors)
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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73.20.At
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(Surface states, band structure, electron density of states)
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