| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Thermal Stability and Humidity Resistance of ScTaO4 Modified (K0.5Na0.5)NbO3 Ceramics |
| ZHENG Li-Mei1, WANG Jin-Feng1, WANG Chun-Ming1, WU Qing-Zao2, ZANG Guo-Zhong3 |
| 1School of Physics, Shandong University, Jinan 2501002China Shipbuilding Industry Corporation, No. 726 Institution, Shanghai 2011083School of Material Science and Engineering, Liaocheng University, Liaocheng 252059 |
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| Cite this article: |
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ZHENG Li-Mei, WANG Jin-Feng, WANG Chun-Ming et al 2009 Chin. Phys. Lett. 26 127701 |
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Abstract Lead-free (Na0.5K0.5)NbO3-xmol% ScTaO4 (x=0-1.5) ceramics are prepared using the conventional solid-state reaction method and their properties are investigated in detail. The results indicate that the piezoelectric properties and density are improved by the introduction of ScTaO4. Due to the high orthorhombic-tetragonal phase transition temperature TO-T (around 200°C), stable piezoelectric properties against temperature are obtained. In a wide temperature range of 15-160°C, kp of the (Na0.5K0.5)NbO3-0.5mol% ScTaO4 ceramic remains almost unchanged and d31 increases slightly from 59pC/N to 71pC/N. The deliquescent problem is effectively solved by the addition of ScTaO4. The piezoelectric properties of ScTaO4 modified (Na0.5K0.5)NbO3 ceramics show no obvious reduction and dielectric loss increases slightly after 120h of immersion. From the analysis, it is suggested that the density is an important factor that improves the humidity resistance of the specimens.
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| Keywords:
77.84.Dy
61.72.S-
77.65.-j
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Received: 06 July 2009
Published: 27 November 2009
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[1] Haertling G H 1967 J. Am. Ceram. Soc. 50 329
[2] Egerton D M D 1959 J. Am. Ceram. Soc. 42 438
[3] R. E. Jaeger L E 1962 J. Am. Ceram. Soc. 45209
[4] Chang Y, Yang Z P, Ma D, Liu Z and Wang Z 2008 J.Appl. Phys. 104 024109
[5] Guo Y, Kakimoto K I and Ohsato H 2004 Appl. Phys.Lett. 04121
[6] Guo Y, Kakimoto K I and Ohsato H 2004 Solid StateCommun. 129 279
[7] Park H Y, Ahn C W, Song H C, Lee J H, Nahm S, Uchino K,Lee H G and Lee H J 2006 Appl. Phys. Lett. 89 062906
[8] Chang Y, Yang Z, Chao X, Zhang R and Li X 2007 Mater.Lett. 61 785
[9] Qi P, Wang J F, Ming B Q, Wang C M and Liang X H 2007 Chin. Phys. Lett. 24 3535
[10] Zheng L M, Wang J F, Ming B Q, Qi P and Du J 2008 Chin. Phys. Lett. 25 2573
[11] Du J, Wang J F, Zang G Z, Qi P, Zhang S J and Shrout T R2008 Chin. Phys. Lett. 25 1446
[12] Shrout T and Zhang S 2007 J. Electroceram. 19113
[13] Baba-Kishi K Z, Reaney I M and Barber D J 1990 J.Mater. Sci. 25 1645
[14] Zheng P, Zhang J L, Shao S F, Tan Y Q and Wang C L 2009 Appl. Phys. Lett. 94 032902 |
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