| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Dependence of Junction Voltage Saturation on Uniformity and Quality of Laser Diode Bars |
| LIANG Qing-Cheng, SHI Jia-Wei, GUO Shu-Xu, LIU Kui-Xue, CAO Jun-Sheng |
| State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 |
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| Cite this article: |
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LIANG Qing-Cheng, SHI Jia-Wei, GUO Shu-Xu et al 2009 Chin. Phys. Lett. 26 127504 |
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Abstract The dependence of the sinkage at the threshold of the electric derivative curve (IdV/dI-I) on the uniformity and the quality of the laser diode bar is analyzed. By using the equations derived from the equivalent circuits of the bars, the influence of the bar uniformity on the depth of the dip is investigated in theory under certain conditions. Furthermore, the experimental results based on the presented technique indicate that the depth of the dip is interrelated to the uniformity and the quality of the corresponding bar. The present technique can be used conveniently and effectively to measure the laser diode bars in practice.
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| Keywords:
75.75.+a
84.37.+q
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Received: 29 July 2009
Published: 27 November 2009
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| PACS: |
75.75.+a
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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