| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Transition Metal Silicide Nanowires Growth and Electrical Characterization |
| PENG Zu-Lin1, LIANG S.2, DENG Luo-Gen1 |
| 1School of Science, Beijing Institute of Technology, Beijing 1000812Science and Engineering of Materials Program, Arizona State University, Tempe, AZ, 85287, USA |
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| Cite this article: |
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PENG Zu-Lin, LIANG S., DENG Luo-Gen 2009 Chin. Phys. Lett. 26 127301 |
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Abstract We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω・cm.
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| Keywords:
73.21.Hb
73.63.Nm
73.63.-b
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Received: 06 February 2009
Published: 27 November 2009
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| PACS: |
73.21.Hb
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(Quantum wires)
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73.63.Nm
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(Quantum wires)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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[1] Preinesberger C, Vandre S, Kalka T and Daehne-Prietsch M1998 J. Phys. D: Appl. Phys. 31 L43
[2] Kuzmin M, Laukkanen P, Perala R E, Vaara R L and VayrynenI J 2004 Appl. Surf. Sci. 222 394
[3] Liu B Z and Nogami J 2003 Surf. Sci. 540 136
[4] Chen Y, Ohlberg D A A and Williams R S 2001 Mater.Sci. Eng. B 87 222
[5] He Z, Smith D J and Bennett P A 2005 Appl. Phys.Lett. 86 143110
[6] Kavanagh K L, Reuter M C and Tromp R M 1997 J. Cryst.Growth 173 393
[7] He Z, Stevens M, Smith D J and Bennett P A 2005 Surf.Sci. 524 148
[8] Bennett P A, Ashcroft B, He Z and Tromp R M 2002 TheThird LEEM/PEEM Workshop, AVS, 2500
[9] Chen L J 2004 in Processing, edited by Weiss B L(The Institution of Electrical Engineers, London, United Kingdom) p5
[10] Wu Y, Xiang J, Yang C, Lu W and Lieber C M 2004 Nature 430 61
[11] Wan Q, Wang T H and Lin C L 2003 Appl. Phys. Lett. 82 3224
[12] Bost M C and Mahan J E 1985 J. Appl. Phys. 582696
[13] Liang S, Islam R, Smith D J, Bennett P A, O'Brien J R andTaylor B 2006 Appl. Phys. Lett. 88 113111
[14] Peng Z L and Liang S 2008 Chin. Phys. Lett. 25 4113
[15] He Z, Smith D J and Bennett P A 2004 Phys. Rev.Lett. 93 256102
[16] Wilms M, Conrad J, Vasilev K and Kreiter G 2004 App.Surf. Sci. APHYS'03 Special Issue 238 490
[17] Marzi G D, Iacopino D, Quinn A J and Redmond G 2004 J. Appl. Phys. 96 3458
[18] Okino H, Matsuda I, Hobara R, Hosomura Y, Hasegawa S andBennett P A 2005 Appl. Phys. Lett. 86 233108
[19] Comrie C M, Falepin A, Richard O and Bender H 2004 J. Appl. Phys. 95 2365
[20] Lee K S, Mo Y H, Nahm K S, Shim H W, Suh E K, Kim J R andKim J J 2004 Chem. Phys. Lett. 384 215
[21] Konstantinidis D A and Aifantis E C 1998 Nanostruct.Mater. 10 1111 |
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