| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005 |
| WANG Wen-Jie1, DENG Jia-Jun1, FU Xing-Qiu2, HU Bing1, DING Kun1 |
| 1Mathematics and Physics Department, North China Electric Power University, Beijing 1022062State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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WANG Wen-Jie, DENG Jia-Jun, FU Xing-Qiu et al 2009 Chin. Phys. Lett. 26 127101 |
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Abstract Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.
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| Keywords:
71.55.Eq
78.55.Cr
78.20.Bh
61.43.-j
68.37.Uv
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Received: 03 July 2009
Published: 27 November 2009
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| PACS: |
71.55.Eq
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(III-V semiconductors)
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78.55.Cr
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(III-V semiconductors)
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78.20.Bh
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(Theory, models, and numerical simulation)
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61.43.-j
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(Disordered solids)
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68.37.Uv
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(Near-field scanning microscopy and spectroscopy)
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