| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling |
| GONG Yue-Feng1,2, SONG Zhi-Tang1, LING Yun1, LIU Yan, FENG Song-Lin1 |
| 1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academic of Sciences, Beijing 100049 |
|
| Cite this article: |
|
GONG Yue-Feng, SONG Zhi-Tang, LING Yun et al 2009 Chin. Phys. Lett. 26 118101 |
|
|
|
|
Abstract A three-dimensional finite element model for phase change random access memory (PCRAM) is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure (HS) and the ring-type contact in bottom electrode (RIB) structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interfacial layer and building a new device structure. The simulation results indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.
|
| Keywords:
81.05.Gc
83.10.Tv
44.10.+i
|
|
|
Received: 06 April 2009
Published: 30 October 2009
|
|
|
|
|
|
|
|
[1] Mainon J 2003 IEEE Proc. Aerospace Conference (BigSky, MT 10--17 March 2001) p 2289
[2] Yi J H et al 2003 IEEE Int. Electron Device Meeting(Washington DC 8--10 December 2003) p 901
[3] Lai S and Lowrey T 2001 IEEE Int. Electron DevicesMeeting (Washington DC 2--5 December 2001) p 803
[4] Lai S 2003 IEEE Int. Electron Devices Meeting(Washington DC 8--10 December 2003) p 255
[5] Matsui Y, Kurotsuchi K, Tonomura O, Morikawa T, KinoshitaM, Fujisaki Y, Matsuzaki N, Hanzawa S, Terao M, Takaura N, Moriya H,Iwasaki T, Moniwa M and Koga T 2006 IEEE Int. Tech. Dig. Int.Electron Devices Meet (Tokyo 11--13 December 2006) p 1
[6] Lee S, Choi K, Ryu S, Yoon S, Lee N, Park Y, Kim S, Lee Sand Yu B 2006 Appl. Phys. Lett. 89 053517
[7] Cabral C, Chen K N, Krusin-Elbaum L and Deline V 2007 Appl. Phys. Lett. 90 051908
[8] Song Y J et al 2005 Proc. European Solid State DeviceResearch Conference (Grenoble, France 12--16 September 2005) p 513
[9] Gong Y F, Ling Y, Song Z T and Feng S L 2008 Chin.Phys. Lett. 25 3455
[10] Reifenberg J, Pop E, Gibby A, Wong S and Goodson K 2006 IEEE Int. Tenth Intersociety Conference on ITHERM (New York 30May--2 June 2006) p 106
[11] Senkader S and Wright C D 2004 J. Appl. Phys. 95 504
[12] Lacaita A L 2005 Solid-State Electron. 50 24
[13] Pellizzer F et al 2004 IEEE Int. Symposium on VLSITechnology, Digest of Technical Papers (Honolulu 15--17 June 2004)p 18
[14] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003 J. Appl. Phys. 94 3536
[15] Kim Y T, Hwang Y N, Lee K H, Lee S H, Jeong C W, AHN S J,Yeung F, Koh G H, Heong H S, Chung W Y, Kim T K, Park Y K, Kim K Nand Kong J T 2005 Jpn. J. Appl. Phys. 44 2701
[16] Kang D H, Kim L H, Jeong J, Cheong B, Ahn D H, Lee D, KimH M, Kim K B and Kim S Y 2006 J. Appl. Phys. 100 54506
[17] Yin Y, Sone H and Hosaka S 2006 Jpn. J. Appl. Phys. 45 6177
[18] Morales-S\'{anchez E et al 2005 Thin Solid Films 471 243
[19] Zhang Y, Feng J, Wang H, Cai B and Chen B 2005 Jap.J. Appl. Phys. 44 1687
[20] Peng C, Cheng L and Mansuripur M 1997 J. Appl.Phys. 82 4183 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
