Chin. Phys. Lett.  2009, Vol. 26 Issue (11): 117103    DOI: 10.1088/0256-307X/26/11/117103
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Metal-Insulator Transition in CuIr2(S1-xTex)4
YUE Song1, DU Juan1, ZHANG Yuan1, ZHANG Yu-Heng2
1Department of Physics, Jinan University, Guangzhou 5106322National High Magnetic Field Laboratory, University of Science and Technology of China, Hefei 230026
Cite this article:   
YUE Song, DU Juan, ZHANG Yuan et al  2009 Chin. Phys. Lett. 26 117103
Download: PDF(426KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The resistivity and magnetization for the CuIr2(S1-xTex)4 (0≤x≤0.10) system are investigated. Compared with the Se doping, the substitution of Te for S leads to stronger suppression on the metal-insulator transition. Vacancies and imperfections in the sample lattice are found to modify the magnetization, which can be qualitatively understood to consist of the Pauli paramagnetism, Landau diamagnetism, Larmor diamagnetism and Curie magnetism contributions.
Keywords: 71.30.+h      72.80.Ga     
Received: 11 June 2009      Published: 30 October 2009
PACS:  71.30.+h (Metal-insulator transitions and other electronic transitions)  
  72.80.Ga (Transition-metal compounds)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/26/11/117103       OR      https://cpl.iphy.ac.cn/Y2009/V26/I11/117103
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
YUE Song
DU Juan
ZHANG Yuan
ZHANG Yu-Heng
[1] Nagata S, Hagino T, Seki Y and Bitoh T 1994 PhysicaB 194--196 1077
[2] Furubayashi T, Matsumoto T, Hagino T and Nagata S 1994 J. Phys. Soc. Jpn. 63 3333
[3] Radaelli P G, Horibe Y, Gutmann M J, Ishibashi H et al2002 Nature 416 155
[4] Kang H, Mandal P, Medvedeva I V, Liebe J, Rao G H, BarnerK et al 1998 J. Appl. Phys. 83 1
[5] Khomskii D I and Mizokawa T 2005 Phys. Rev. Lett. 94 156402
[6] Yagasaki\,K, Nakama T, Hedo M, Uwatoko Y, Shimoji Y et al2006 J. Phys. Soc. Jpn. 75 074706
[7] Endoh R, Matsumoto N, Chikazawa S, Nagata S et al 2001 Phys. Rev. B 64 075106
[8] Cao G H, Furubayashi T, Suzuki H, Kitazawa H et al 2001 Phys. Rev. B 64 214514
[9] Yagasaki K, Nakama T, Hedo M, Uchima K, Shimoji Y,Matsumoto N et al 2002 J. Phys. Chem. Solids 63 1051
[10] Cao G H, Kitazawa H, Matsumoto T and Feng C M 2004 Phys.Rev. B 69 045106
[11] Cao G H, Xu X F, Jiao Z K, Kitazawa H, Matsumoto T and Feng C M2005 Phys. Rev. B 72 125128
[12] Zhang L, Ling L S, Tan S, Pi L and Zhang Y H 2008 J.Phys.: Condens. Matter 20 255205
[13] Matsumoto N, Endoh R, Nagata S, Furubayashi T and Matsumoto T 1999 Phys. Rev. B 60 5258
[14] Endoh R, Matsumoto N, Awaka J, Ebisu S and Nagata S 2002 J. Phys. Chem. Solids 63 669
[15] Endoh R, Awaka J and Nagata S 2003 Phys. Rev. B 68 115106
[16] Hagino T, Seki Y and Nagata S 1994 Physica C 235--240 1303
[17] Furubayashi T, Kosaka T, Tang J, Matsumoto T, Kato Y andNagata S 1997 J. Phys. Soc. Jpn. 66 1563
[18] Oomi G, Kagayama T, Yoshida I, Hagina T and Nagata S 1995 J. Magn. Magn. Mater. 140--144 157
[19] Somasundaram P, Honig J M, Pekarek T M and Crooker B C,1996 J. Appl. Phys. 79 5401
[20] Somasundaram P, Kim D, Honig J M, Pekarek T M, Gu T andGoldman A I 1998 J. Appl. Phys. 83 7243
[21] Nagata S, Matsumoto N, Kato Y, Furubayashi T, Matsumoto T, Sanchez J P and Vulliet P 1998 Phys. Rev. B 58 6844
[22] Burkov A T, Nakama T, Hedo M, Shintani K, Yagasaki K,Matsumoto N and Nagata S 2000 Phys. Rev. B 61 10049
[23] Nagata S, Kijima N, Ikeda S, Matsumoto N, Endoh R, Chikazawa S, Shimono I and Nishihara H 1999 J. Phys. Chem. Solids 60 163
Related articles from Frontiers Journals
[1] AO Bing-Yun**, AI Juan-Juan, GAO Tao**, WANG Xiao-Lin, SHI Peng, CHEN Pi-Heng, YE Xiao-Qiu. Metal-Insulator Transition of Plutonium Hydrides: DFT+U Calculations in the FPLAPW Basis[J]. Chin. Phys. Lett., 2012, 29(1): 117103
[2] C. K. Sumesh**, K. D. Patel, V. M. Pathak, R. Srivastav . Current Transport in Copper Schottky Contacts to a−Plane/ c−Plane n-Type MoSe2[J]. Chin. Phys. Lett., 2011, 28(8): 117103
[3] PAN Li-Jun, JIA Yu, **, SUN Qiang, HU Xing . Electronic Properties of Boron Nanotubes under Uniaxial Strain: a DFT study[J]. Chin. Phys. Lett., 2011, 28(8): 117103
[4] WANG Yan, LIU Qi, LV Hang-Bing, LONG Shi-Bing, ZHANG Sen, LI Ying-Tao, LIAN Wen-Tai, YANG Jian-Hong**, LIU Ming . CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films[J]. Chin. Phys. Lett., 2011, 28(7): 117103
[5] ZHAO Geng, CHENG Xiao-Man, **, TIAN Hai-Jun, DU Bo-Qun, LIANG Xiao-Yu . Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer[J]. Chin. Phys. Lett., 2011, 28(12): 117103
[6] ZHAO Wei**, DING Jian-Wen . Reproduced Giant Localization Length of Two-Side Surface Disordered Nanowires with Long-Range Correlation[J]. Chin. Phys. Lett., 2011, 28(10): 117103
[7] XU Jia-Xiong, YAO Ruo-He*, LIU Yu-Rong . Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature[J]. Chin. Phys. Lett., 2011, 28(10): 117103
[8] LI Na, YUE Chong-Xing**, LI Xu-Xin . Neutrino-Electron Scattering and the Little Higgs Models[J]. Chin. Phys. Lett., 2011, 28(10): 117103
[9] FU Di, XIE Dan, ZHANG Chen-Hui, ZHANG Di, NIU Jie-Bin, QIAN He, LIU Li-Tian,. Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications[J]. Chin. Phys. Lett., 2010, 27(9): 117103
[10] SUN Bing, LIU Li-Feng, HAN De-Dong, WANG Yi, LIU Xiao-Yan, HAN Ru-Qi, KANG Jin-Feng. Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process[J]. Chin. Phys. Lett., 2008, 25(6): 117103
[11] WANG Qing-Bo, XU Xiang-Fan, TAO Qian, WANG Hong-Tao, XU Zhu-An. Metal--Insulator Transition in Ca-Doped Sr14-xCaxCu24O41 Systems Probed by Thermopower Measurements[J]. Chin. Phys. Lett., 2008, 25(5): 117103
[12] TU Tao, ZHAO Yong-Jie, HAO Xiao-Jie, WANG Cheng-You, GUO Guang-Can, GUO Guo-Ping. Localization Exponent for the Second Landau Level in the Quantum Hall Effect[J]. Chin. Phys. Lett., 2008, 25(3): 117103
[13] LV Hang-Bing, ZHOU Peng, FU Xiu-Feng, YIN Ming, SONG Ya-Li, TANG Li, TANG Ting-Ao, LIN Yin-Yin. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications[J]. Chin. Phys. Lett., 2008, 25(3): 117103
[14] ZHOU Peng, LI Jing, CHEN Liang-Yao, TANG Ting-Ao, LIN Yin-Yin. Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application[J]. Chin. Phys. Lett., 2008, 25(10): 117103
[15] M. Y. Nadee, Nadeem Iqbal, M. F. Wasiq, A. U. Khosa. High Field Electrical Conduction in Pre-Formed Al--ZnS--Al Thin Films in Metal--Insulator--Metal Devices[J]. Chin. Phys. Lett., 2007, 24(7): 117103
Viewed
Full text


Abstract