| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Measurement of Refractive Index for High Reflectance Materials with Terahertz Time Domain Reflection Spectroscopy |
| SUN Wen-Feng1, WANG Xin-Ke2, ZHANG Yan1 |
| 1Beijing Key Lab for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics (Ministry of Education), Department of Physics, Capital Normal University, Beijing 1000482Department of Physics, Harbin Institute of Technology, Harbin 150001 |
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| Cite this article: |
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SUN Wen-Feng, WANG Xin-Ke, ZHANG Yan 2009 Chin. Phys. Lett. 26 114210 |
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Abstract A method to measure the refractive index for high reflectance materials in the terahertz range with terahertz time domain reflection spectroscopy is proposed. In this method, the THz waveforms reflected by a silicon wafer and high reflectance sample are measured respectively. The refractive index of the silicon wafer, measured with the THz time domain transmission spectroscopy, is used as a reference in the THz time domain reflective spectroscopy. Therefore, the complex refractive index of the sample can be obtained by resorting to the known reflective index of the silicon and the Fresnel law. To improve the accuracy of the phase shift, the Kramers-Kronig transform is adopted. This method is also verified by the index of the silicon in THz reflection spectroscopy. The bulk metal plates have been taken as the sample, and the experimentally obtained metallic refractive indexes are compared with the simple Drude model.
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| Keywords:
42.25.Gy
02.70.Hm
07.57.-c
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Received: 11 August 2009
Published: 30 October 2009
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| PACS: |
42.25.Gy
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(Edge and boundary effects; reflection and refraction)
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02.70.Hm
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(Spectral methods)
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07.57.-c
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(Infrared, submillimeter wave, microwave and radiowave instruments and equipment)
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