| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Cu Doping Effect on Electrical Resistivity and Seebeck Coefficient of Perovskite-Type LaFeO3 Ceramics |
| WANG Hong-Chao, WANG Chun-Lei, ZHANG Jia-Liang, ZHAO Ming-Lei, LIU Jian, SU Wen-Bin, YIN Na, MEI Liang-Mo |
| School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 |
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| Cite this article: |
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WANG Hong-Chao, WANG Chun-Lei, ZHANG Jia-Liang et al 2009 Chin. Phys. Lett. 26 107301 |
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Abstract Perovskite-type LaFe1-xCuxO3 (x=0.10$, 0.14, 0.18) solid solution is prepared with the conventional solid-state reaction technique. The electrical resistivity and the Seebeck coefficient are measured in the temperature range 473-1073K to elucidate the Cu doping effect on the thermoelectric properties of the LaFeO3. The electrical resisitivity of LaFe1-xCuxO3 shows semiconducting behavior. The temperature dependence of the electrical resistivity indicates that the adiabatic small-polaron hopping mechanism is dominant for their electric transportations. The activation energy decreases with the increasing Cu content as well as the increasing temperature. The Seebeck coefficient changes from a negative value to a positive value around 510K, and increases with rising temperature up to 710K, then becomes saturated around 200μV/K. The Seebeck coefficient decreases with the substitution of Cu atoms in the temperature range of 573-1073K, while the electrical resistivity decreases with the substitution of Cu atoms in the whole measured temperature. Overall the power factor increases with rising temperature, and the highest value of power factor is 54μW/K2m for x=0.10 of Cu doping.
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| Keywords:
73.61.Le
72.20.Pa
72.15.Jf
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Received: 07 April 2009
Published: 27 September 2009
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| PACS: |
73.61.Le
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(Other inorganic semiconductors)
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72.20.Pa
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(Thermoelectric and thermomagnetic effects)
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72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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[1] Xu Y D, Xu G Y, Liu Y H and Ge C C 2008 Chin. Phys.Lett. 25 2664
[2] Zhu P W, Imai Y, Isoda Y, Shinohara Y, Jia X P and Zou G T2005 Chin. Phys. Lett. 22 2103
[3] Terasaki I, Sasago Y and Uchinokura K 1997 Phys.Rev. B 56 R12685
[4] Okuda T et al 2001 Phys. Rev. B 63 113104
[5] Robert R et al 2006 J. Solid State Chem. 1793893
[6] Yasukawa M and Kono T 2008 Solid State Commun. 146 458
[7] Hung M H, Madhava Rao M V and Tsai D S 2007 Mater.Chem. Phys. 101 297
[8] Mizusaki J et al 1987 J. Solid State Chem. 671
[9] Giannakas A E, Ladavos A K and Pomonis P 2004 J.Appl. Catal. B 49 147
[10] Iwasaki K 2006 J. Alloys Compd. 430 297
[11] Vecherskii S I 2004 Phys. Solid State 46 1433
[12] Tai LW 1995 Solid State Ionic. 76 117
[13] Park C Y and Jacohson A J 2005 J. Electrochem. Soc. 152 165
[14] Zhou X D et al 2006 J. Electrochem. Soc. 153J133
[15] Mott N F and Davis E A 1971 Electrical Process inNon-Crystal-line Materials (Oxford: Oxford University)
[16] Weber W J, Griffin C W and Bates J L 1987 J. Am.Ceram. Soc. 70 265
[17] Jung W H and Iguchi E 1998 J. Phys. D: Appl. Phys. 31 794
[18] Mizusaki J 1982 J. Am. Ceram. Soc. 66 363
[19] Kittel C 2001 Introduction to Solid State Physics(Singapore: Wiley) |
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