Air Stability of Cs<SUB>2</SUB>CO<SUB>3</SUB>:Ag/Ag Cathode for Organic Light-Emitting Diodes

doi:10.1088/0256-307X/26/10/106801

Chin. Phys. Lett.

2009, Vol. 26

Issue (10): 106801 DOI: 10.1088/0256-307X/26/10/106801

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Air Stability of Cs₂CO₃:Ag/Ag Cathode for Organic Light-Emitting Diodes

LIU Qian, DUAN Lian, ZHANG De-Qiang, QIAO Juan, WANG Li-Duo, QIU Yong

Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084

Cite this article:

LIU Qian, DUAN Lian, ZHANG De-Qiang et al 2009 Chin. Phys. Lett. 26 106801

Download: PDF(2120KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract We report the superior stability of the composite Cs₂CO₃:Ag/Ag cathode structure, which can be used in efficient organic light-emitting diodes (OLEDs). Devices with the Cs₂CO₃:Ag (1:10, 5nm)/Ag (95nm) cathode show a considerably improved lifetime compared with the control device with the Cs₂CO₃ (0.5nm)/Ag (100nm) cathode. The composite Cs₂CO₃:Ag/Ag film is proved to be stable in the atmosphere. X-ray diffraction (XRD) is applied to analyze the crystalline structure of the Cs₂CO₃:Ag film, and it is demonstrated that CsAg alloy is formed, leading to the improved stability of the thin film and the devices.

Keywords: 68.35.Bd 68.37.-d 61.05.Cp

Received: 03 June 2009 Published: 27 September 2009

PACS:	68.35.bd	(Metals and alloys)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	61.05.cp	(X-ray diffraction)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/10.1088/0256-307X/26/10/106801 OR https://cpl.iphy.ac.cn/Y2009/V26/I10/106801

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	LIU Qian
	DUAN Lian
	ZHANG De-Qiang
	QIAO Juan
	WANG Li-Duo
	QIU Yong

[1] Tang C W and VanSlyke S A 1987 Appl. Phys. Lett. 51 913
[2] Hung L S, Tang C W and Mason M G 1997 Appl. Phys.Lett. 70 152
[3] Jabbour G E, Kippelen B, Armstrong N R and Peyghambarian N1998 Appl. Phys. Lett. 73 1185
[4] Huang J, Xu Z and Yang Y 2007 Adv. Funct. Mater. 17 1966
[5] Hasegawa T, Miura S, Moriyama T, Kimura T, Takaya I, OsatoY and Mizutani H 2004 SID Int. Symp. Dig. Tech. Pap. 35154
[6] Wu H B, Huang F, Peng J B and Cao Y 2005 Org.Electron. 6 118
[7] Schaer M, N\"uesch F, Berner D, Leo W and Zuppiroli L 2001 Adv. Funct. Mater. 11 116
[8] Liu Q, Duan L, Zhang D Q, Dong G F, Qiao J, Wang L D andQiu Y 2009 Jpn. J. Appl. Phys. 48 020206
[9] Li Y, Zhang D Q, Duan L, Zhang R, Wang L D and Qiu Y 2007 Appl. Phys. Lett. 90 012119
[10] Hall H T, Merrill L and Barnett J D 1964 Science 146 1297

Related articles from Frontiers Journals

[1]	YAN Shi-Chao,XIE Nan,GONG Hui-Qi,SUN Qian,GUO Yang,SHAN Xin-Yan,LU Xing-Hua. Mapping the Diffusion Potential of a Reconstructed Au(111) Surface at Nanometer Scale with 2D Molecular Gas**[J]. Chin. Phys. Lett., 2012, 29(4): 106801
[2]	SUN Bing, CHANG Hu-Dong, LU Li, LIU Hong-Gang, WU De-Xin. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy[J]. Chin. Phys. Lett., 2012, 29(3): 106801
[3]	DING Tao, SONG Jun-Qiang, CAI Qun. Effect of Multiple Depositions and Annealing Treatments on the Erbium Silicide Nanoislands Self-Assembled on Si(001) Substrates[J]. Chin. Phys. Lett., 2012, 29(3): 106801
[4]	CHENG Feng-Feng , FA Tao, WANG Xin-Qiang, YAO Shu-De. Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling[J]. Chin. Phys. Lett., 2012, 29(2): 106801
[5]	TENG Long, ZHANG Rong, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou. Raman Scattering Study of In_xGa_1−xN Alloys with Low Indium Compositions[J]. Chin. Phys. Lett., 2012, 29(2): 106801
[6]	SANG Ling, WANG Jun, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 106801
[7]	FAN Da-Wei, WEI Shu-Yi, LIU Jing, LI Yan-Chun, XIE Hong-Sen . High Pressure X-Ray Diffraction Study of a Grossular–Andradite Solid Solution and the Bulk Modulus Variation along this Solid Solution**[J]. Chin. Phys. Lett., 2011, 28(7): 106801
[8]	DING Bin-Beng, PAN Feng, FENG Zhe-Chuan, FA Tao, CHENG Feng-Feng, YAO Shu-De . Structural Analysis of In_xGa_1−xN/GaN MQWs by Different Experimental Methods**[J]. Chin. Phys. Lett., 2011, 28(7): 106801
[9]	GUO Jing-Wei, HUANG Hui, REN Xiao-Min, YAN Xin, CAI Shi-Wei, GUO Xin, HUANG Yong-Qing, WANG Qi, ZHANG Xia, WANG Wei . Growth of Zinc Blende GaAs/AlGaAs Radial Heterostructure Nanowires by a Two-Temperature Process**[J]. Chin. Phys. Lett., 2011, 28(3): 106801
[10]	DUAN Li, GAO Wei . Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering**[J]. Chin. Phys. Lett., 2011, 28(3): 106801
[11]	WANG Yue, WU Da-Jian, YANG Yue-Tao, LIU Xiao-Jun . Nd-Doping Induced Lattice Distortion in TiO₂ Nanoparticles**[J]. Chin. Phys. Lett., 2011, 28(2): 106801
[12]	GUO Xiao-Song, BAO Zhong, ZHANG Shan-Shan, XIE Er-Qing . A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(2): 106801
[13]	ZHOU Zhi-Feng, QIN Fu-Wen, , ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N₂ Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD**[J]. Chin. Phys. Lett., 2011, 28(2): 106801
[14]	GUO Xiao-Song, ZHANG Shan-Shan, BAO Zhong, ZHANG Hong-Liang, CHEN Chang-Cheng, LIU Li-Xin, LIU Yan-Xia, XIE Er-Qing . Effect of Substrate Temperature on the Structural, Electrical and Optical Properties of Nanocrystalline Silicon Films in Hot-Filament Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(2): 106801
[15]	FAN Da-Wei*, MA Mai-Ning, YANG Jun-Jie, WEI Shu-Yi, CHEN Zhi-Qiang, XIE Hong-Sen . In situ* High-Pressure Synchrotron X-Ray Diffraction Study of Clinozoisite[J]. Chin. Phys. Lett., 2011, 28(12): 106801

Viewed

Full text

Abstract