| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode |
| NIU Jun1,2, YANG Zhi1, CHANG Ben-Kang1 |
| 1Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 2100942Department of Electronic and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004 |
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| Cite this article: |
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NIU Jun, YANG Zhi, CHANG Ben-Kang 2009 Chin. Phys. Lett. 26 104202 |
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Abstract The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.
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| Keywords:
42.70.Gi
71.55.Eq
72.10.-d
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Received: 30 March 2009
Published: 27 September 2009
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| PACS: |
42.70.Gi
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(Light-sensitive materials)
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71.55.Eq
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(III-V semiconductors)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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