Chin. Phys. Lett.  2009, Vol. 26 Issue (1): 017106    DOI: 10.1088/0256-307X/26/1/017106
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Temperature and Thickness Effects on Electrical Properties of InP Films Deposited by Spray Pyrolysis
Refik Kayali1, Mehmet Ari2, Mustafa Öztacs3, Metin Bedir3, Funda Aksoy1
1Department of Physics, Arts and Sciences Faculty, Nigde University, Nigde, Turkey2Department of Physics, Arts and Sciences Faculty, Erciyes University, Kayseri, Turkey3Department if Physics and Engineering, Engineering Faculty, Gaziantep University, Gaziantep, Turkey
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Refik Kayali, Mehmet Ari, Mustafa Ö et al  2009 Chin. Phys. Lett. 26 017106
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Abstract InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500°C with different thicknesses of the films. The structural properties of the samples are determined by x-ray diffraction (XRD). It is found that the crystal structure of the InP films is polycrystalline hexagonal. The orientations of all the obtained films are along the c-axis perpendicular to the substrate. The electrical measurements of the samples are obtained by dc four-probe technique on rectangular-shape samples. The effects of temperature on the electrical properties of the InP films are studied in detail.
Keywords: 71.20.Nr      72.80.Ey      73.61.Ey     
Received: 29 April 2008      Published: 24 December 2008
PACS:  71.20.Nr (Semiconductor compounds)  
  72.80.Ey (III-V and II-VI semiconductors)  
  73.61.Ey (III-V semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/1/017106       OR      https://cpl.iphy.ac.cn/Y2009/V26/I1/017106
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Refik Kayali
Mehmet Ari
Mustafa Ö
ztacs
Metin Bedir
Funda Aksoy
[1] Lee M K, Wuu D S and Herng R H 1993 Appl. Phys.Lett. 62 1140
[2] Ito K and Nakazowa T 1988 J. Appl. Phys. 582638
[3] Li X et al 1989 Appl. Phys. Lett. 54 2674
[4] Byrne E K, Parkanyi L and Thepold K H 1988 Science 241 332
[5] Guzelian A A et al 1996 J. Phys. Chem. 1007212
[6] Epler J E, Schweizer H, Pedersen J and Sochtig 1995 JAppl. Phys. Lett. 66 1472
[7] Gardner N F et al 1994 Appl. Phys. Lett. 65359
[8] Sidhu L S, Zukotynski S, Kruzelecky R V and Thompson D A J1995 Appl. Phys. 77 378
[9] Yang B X and Hasegawa H 1993 Jpn. J. Appl. Phys. 33 742
[10] Rao T S, Lacelle C and Roth A P 1993 J. Vac. Sci.Technol. B 11 840
[11] Oztas M, Bedir M, Kayal\i R and Aksoy F 2006 J.Mater Sci: Mater. Electron. 17 841
[12] Smits F M 1957 Bell Syst. Tech. J. 711 8
[13] Aksoy F, Kayali R, \"{Ozta\c{s M and Bedir M 2008 J.of Phys. Chem.of Sol. 69 835
[14] Liu Y H, Meng L and Zhang L 2005 Thin Solid Films 479 8
[15] Lee H W, Lau S P, Wang Y G, Tse K Y, Hng H H and Tay B K2004 J. Cryst. Growth 268 598
[16]. Yu X, Ma J, Ji F, Wang Y, Cheng C and Ma H L 2005 Appl. Sur. Sci. 245 310
[17] \"{Oztas M and Bedir M 2008 Thin Solid Films 516 1703
[18] Gadakh S R, Killedar V V, Lokhande C D and Bhosale C H1998 Mater. Chem. Phys. 56 79
[19] Kazmerski L L 1980 Polycrystalline and AmorphousThin Films and Devices (New York: Academic)
[20] Harbeke G 1985 Polycrystalline Semiconductors:Physical Properties and Applications (Berlin: Springer)
[21] Maity R and Chattopadhyay K K 2006 Solar EnergyMater. Solar Cells 90 597
[22] Bhuse V M, Hankare P P, Garadkar K M and Khomane A S 2003 Mater. Chem. Phys. 80 82
[23] Chourashiya M G, Patil J Y, Pawar S H and Jadhav L D 2008 Mater. Chem. Phys. 109 39
[24] Mane R S, Sankapal B R and Lokhande C D 2000 Mater.Chem. Phys. 64 215
[25] Prathap P, Subbaiah Y P V, Ramakrishna Reddy K T andMiles R W 2007 J. Phys. D: Appl. Phys. 40 5275
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