FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
A Sensor-on-Chip Based on Second-Order Optical Effect of ZnO Nanowires |
ZHU Jing, ZHU Guang-Ping, LU Chang-Gui, XU Chun-Xiang, CUI Yi-Ping |
Advanced Photonics Center, Southeast University, Nanjing 210096 |
|
Cite this article: |
ZHU Jing, ZHU Guang-Ping, LU Chang-Gui et al 2009 Chin. Phys. Lett. 26 014204 |
|
|
Abstract Strong second-order nonlinear effect of ZnO nanowires on a silicon wafer are demonstrated by using the hyper-Rayleigh scattering (HRS) measurement. The large nonlinear effect can be attributed to the following two factors: (1) the large total dipole moment caused by high surface defect density and electrostatic potential gradient, (2) coherent effect due to high crystal quality of single nanowire. Moreover, the second-order nonlinear effect is found to become weaker when the chip is put into organic solvent due to modification of surface defect caused by organic molecules. The variation of second-order signal in the solvent indicated the potential applications of ZnO nanowires as a sensor-on-chip (SoC).
|
Keywords:
42.65.-k
42.79.Nq
|
|
Received: 12 September 2008
Published: 24 December 2008
|
|
|
|
|
|
[1] Zyss J 1994 Molecular Nonlinear Optics (Boston:Academic) [2] Prasad N P and Williams D J 1991 Introduction toNonlinear Optical Effects in Molecules and Polymers (New York:Wiley) [3] Liu SW, Weerasinghe J L, Liu J, Weaver J, Chen C L, DonnerW and Xiao M 2007 Opt. Express 15 10666 [4] Lo K Y, Huang Y J, Huang J Y, Feng Z C, Fenwick W E, Pan Mand Ferguson I T 2007 Appl. Phys. Lett. 90 161904 [5] Lo K Y, Lo S C, Yu C F, Tite T, Huang J Y, Huang Y J,Chang R C and Chu S Y 2008 Appl. Phys. Lett. 92 091909 [6] Neethling P H, Rohwer E G, Bergmann H M V and Stafast H2008 Phys. Status Solidi 5 552 [7] Prasanth R, Vugt L K V, Vanmaekelbergh D A M and GerritsenH C 2006 Appl. Phys. Lett. 88 181501 [8] Zhang C F, Dong Z W, You G J, Zhu R Y, Qiana S X, Deng H,Cheng H and Wang J C 2006 Appl. Phys. Lett. 89 042117 [9] Xu C X, Sun X W and Chen B J 2004 Appl. Phys. Lett. 84 1540 [10] Clays K and Persoons A 1991 Phys. Rev. Lett. 66 2980 [11] Bersohn R, Pao Y H and Frisch H L 1966 J. Chem.Phys. 45 3184 [12] Cheng N L 2002 Solvents Handbook (Beijing: ChemicalIndustry Press) (in Chinese) [13] Lin B X, Fu Z X and Jia Y B 2001 Appl. Phys. Lett 79 943 [14] Al-Hilli S M, Al-Mofarji R T, Klason P, Willander M,Gutman N and Sa'ar A 2008 J. Appl. Phys. 103 014302 [15] Liao L, Lu H B, Shuai M, Li J C, Liu Y L, Liu C, Shen Z Xand Yu T 2008 Nanotechnology 19 175501 [16] Chang S J, Hsueh T J, Hsu C L, Lin Y R, Chen I C andHuang B R 2008 Nanotechnology 19 095505 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|