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Probing Field Emission from Boron Carbide Nanowires |
| TIAN Ji-Fa1, BAO Li-Hong1, WANG Xing-Jun1, HUI Chao1, LIU Fei2, LI Chen1, SHEN Cheng-Min1, WANG Zong-Li1, GU Chang-Zhi1, GAO Hong-Jun1 |
| 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Laboratory for State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 |
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| Cite this article: |
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TIAN Ji-Fa, BAO Li-Hong, WANG Xing-Jun et al 2008 Chin. Phys. Lett. 25 3463-3466 |
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Abstract High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 106 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.
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| Keywords:
81.07.-b
73.63.-b
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Received: 10 March 2008
Published: 29 August 2008
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| PACS: |
81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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