| Original Articles |
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Effect of CO on Characteristics of AlGaN/GaN Schottky Diode |
| FENG Chun, WANG Xiao-Liang, YANG Cui-Bai, XIAO Hong-Ling, ZHANG Ming-Lan, JIANG Li-Juan, TANG Jian, HU Guo-Xin, WANG Jun-Xi, WANG Zhan-Guo |
| Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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FENG Chun, WANG Xiao-Liang, YANG Cui-Bai et al 2008 Chin. Phys. Lett. 25 3025-3027 |
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Abstract Pt Schottky diode gas sensors for CO are fabricated using AlGaN/GaN high electron mobility transistor (HEMTs) structure. The diodes show a remarkable sensor signal (3mA, in N2; 2mA in air ambient) biased 2V after 1% CO is introduced at 50°C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N2, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection.
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| Keywords:
73.61.Ey
07.07.Df
73.40.Ns
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Received: 25 January 2008
Published: 25 July 2008
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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73.40.Ns
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(Metal-nonmetal contacts)
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