KLn Dielectronic Recombination Process of B- Through He-like Cu Ions

Chin. Phys. Lett.

2008, Vol. 25

Issue (3): 930-933 DOI:

Original Articles

KLn Dielectronic Recombination Process of B- Through He-like Cu Ions

GAO Ying-Hui;ZHANG Xue-Mei;NG Fan-Chang;CHEN Wen-Dong;CHEN Chong-Yang;ZOU Ya-Ming

¹EBIT Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433²The Key Laboratory of Applied Ion Beam Physics (Ministry of Education), Fudan University, Shanghai 200433

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GAO Ying-Hui, ZHANG Xue-Mei, NG Fan-Chang et al 2008 Chin. Phys. Lett. 25 930-933

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Abstract The KLn dielectronic recombination processes of trapped highly charged B-like through He-like Cu ions are studied theoretically, and the theoretical results are used to analyse our previous experimental data at Heidelberg electron beam ion trap (EBIT). The theoretical resonant positions agree with the experimental resonant positions to a precision of 0.4%, in comparison with the resonant positions of those highest peaks between theory and experiment. The experimental spectra are then fitted using a formula with the theoretical resonant energies and strengths, the result shows good overall agreement between theory and experiment over a wide electron energy range. The distribution of highly charged states is obtained from the fitting parameters.

Keywords: 34.80.Lx

Received: 22 October 2007 Published: 27 February 2008

PACS:

34.80.Lx

(Recombination, attachment, and positronium formation)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2008/V25/I3/0930

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	GAO Ying-Hui
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	CHEN Wen-Dong
	CHEN Chong-Yang
	ZOU Ya-Ming

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