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Influence of Dopants in ZnO Films on Defects |
| PENG Cheng-Xiao1, WENG Hui-Min2, ZHANG Yang1, MA Xing-Ping1, YE Bang-Jiao2 |
| 1Institute of Microsystem Physics, Henan University, Kaifeng 4750042Modern Physics Department, University of Science and Technology of China, Hefei 230026 |
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PENG Cheng-Xiao, WENG Hui-Min, ZHANG Yang et al 2008 Chin. Phys. Lett. 25 4442-4445 |
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Abstract The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl>Sun>SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.
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| Keywords:
78.70.Bj
68.55.Ln
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Received: 02 September 2008
Published: 27 November 2008
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| PACS: |
78.70.Bj
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(Positron annihilation)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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[1] Sundqvist P A, Zhao Q X and Willander M 2003 Phys.Rev. B 68 155334
[2]Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2004 J. Vac. Sci. Technol. B 22 932
[3]\"Ozg\"ur \"U,Alivov Ya I, Liu C, Teke A, Reshchikov M A,Do\v{gan S, Cho S J, Avrutin V and Morkoc H 2005 J. Appl.Phys. 98 041301
[4]Uedono A, Koida T, Tsukazaki A, Kawasaki M, Chen Z Q,Chichibu SF and Koinuma H 2003 J. Appl. Phys. 93 2481
[5]Joseph M, Tabata H, Saeki H, Ueda K and Kawai T 2001 Physica B 302/303 140
[6]Minegishi K, Koiwai Y, Kikuchi Y, Yano K, Kasuga M andShimizu A 1997 Jpn J. Appl. Phys. 36 L1453
[7]Ryu Y R, Zhu S, Look D C, Wrobel J M, Jeong H M and White HW 2000 J. Crys. Growth 216 330
[8]Park C H, Zhang S B and Wei S H 2002 Phys. Rev. B 66 073202
[9]Lee W J, Kang J and Chang K J 2006 73 024117
[10] Lu J G, Ye Z Z, Zhuge F, Zeng Y J, Zhao B H and Zhu L P2004 Appl. Phys. Lett. 85 3134
[11] Lee E C, Kim Y S, Jin Y G and Chang K J 2001 Phys.Rev. B 64 085120
[12]Yan Y F, Al-Jassim M. M. and Wei S H 2006 Appl. Phys.Lett. 89 181912
[13]Kang H S, Ahn B D, Kim J H, Kim G H and Lim S H 2006 Appl. Phys. Lett. 88 202108
[14]Ahn B D, Kang H S, Kim J H, Kim G H, Chang H W and Lee S Y2006 J. Appl. Phys. 100 093701
[15]Duan L, Lin B X, Zhang W Y, Zhong S and Fu Z X 2006 Appl. Phys. Lett. 88 232110
[16]Sernelius B E, Berggren K F, Jin Z C, Hamberg I andGranqvist C G 1988 Phys. Rev. B 37 10244
[17]Ma J and Feng J 1996 Thin Solid Films 279 213
[18]Minami T, Suzuki S and Miyata T 2001 Thin SolidFilms 398 53
[19]Bamiduro O, Mustafa H, Mundle R, Konda R B and Pradhan A K2007 Appl. Phys. Lett. 90 252108
[20]Oba F, Nishitani S R, Isotani S and Adachi H 2001 J.Appl. Phys. 90 824
[21]Saarinen K 2000 III--V Nitride Semiconductors:Electrical, Structural and Defects Properties edited by Manasreh M (Amsterdam: Elsevier) p 109
[22]Krause-Rehberg R and Leipner H S 1998 (Berlin:Springer)
[23] Tuomisto F, Ranki V, Saarinen K and Look D C 2003 Phys. Rev. Lett. 91 205502
[24]Kawasuso A, Redmann F, Krause-Rehberg R, Yoshikawa M,Kojima K and Itoh H 2001 Phys. Stat. Sol. (b) 223 R8
[25]Xiong G, Wilkinson J, Mischuck B, T\"uzemen S, Ucer K Band Williams R T 2002 Appl. Phys. Lett. 80 1195
[26]Zhang S B, Wei S H and Zunger A 2001 Phys. Rev. B 63 075205
[27]Peng C X, Weng H M, Yang X J, Ye B J, Cheng B, Zhou X Yand Han R D 2006 Chin. Phys. Lett. 23 489
[28]Wang Q X, Xiong Z H, Rao J P, Dai J N, Yue S P, Wang G Pand Jiang F Y 2007 Chin. J. Semiconduct. 28 696 (inChinese) |
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