Chin. Phys. Lett.  2007, Vol. 24 Issue (6): 1738-1740    DOI:
Original Articles |
ZnO Nanostructures Grown on AlN/Sapphire Substrates by MOCVD
WEI Hong-Yuan;HU Wei-Guo;ZHANG Pan-Feng;LIU Xiang-Lin;ZHU Qin-Sheng;WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Cite this article:   
WEI Hong-Yuan, HU Wei-Guo, ZHANG Pan-Feng et al  2007 Chin. Phys. Lett. 24 1738-1740
Download: PDF(517KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract ZnO nanorods and nanotubes are successful synthesized on AlN/sapphire substrates by metal-organic chemical vapour deposition (MOCVD). The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the AlN under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.
Keywords: 81.05.Dz      81.07.-b      81.15.Gh     
Received: 14 March 2007      Published: 17 May 2007
PACS:  81.05.Dz (II-VI semiconductors)  
  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I6/01738
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
WEI Hong-Yuan
HU Wei-Guo
ZHANG Pan-Feng
LIU Xiang-Lin
ZHU Qin-Sheng
WANG Zhan-Guo
[1] Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, K,Ohtani S, Chichibu F, Fuke S, Segawa Y, Ohno H, Koinuma H and KawasakiM 2005 Nature Mater. 4 42
[2] Huang M H, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo Rand Yang P 2001 Science 292 1897
[3] Tong Y H, Liu Y C, Shao C L and Mu R X 2006 Appl. Phys. Lett. 88 123111
[4] Zhang B P, Binh N T, Wakatsuki K, Segawa Y, Yamada Y, Usami N andKawasaki M 2004 Appl. Phys. Lett. 84 4098
[5] Xu W Z, Ye Z Z, Ma D W, Lu H M, Zhu L P, Zhao B H, Yang X D and XuZ Y 2005 Appl. Phys. Lett. 87 093110
[6] Liu Z W, Ong C K, Yu T and Shen Z X 2006 Appl. Phys.Lett. 88 053110
[7] Su X, Zhang Z J and Zhu M M 2006 Appl. Phys. Lett. 88 061913
[8] Le H Q, Chua S J, Koh Y W, Loh K P, Chen Z, Thompson C V andFitzgerald E A 2005 Appl. Phys. Lett. 87 101908
[9] Law J B K and Thong J T 2006 Appl. Phys. Lett. 88 133114
[10] Han S W and Yoo H J 2006 Appl. Phys. Lett. 88 111910
[11] Levin I, Davydov A, Nikoobakht B and Sanford N 2005 Appl. Phys.Lett. 87 103110
[12] Cong G W, Wei H Y, Zhang P F, Peng W Q, Wu J J, Liu X L, Jiao C M,Hu W G, Zhu Q S and Wang Z G 2005 Appl. Phys. Lett. 87 231903
[13] Wang L, Pu Y, Chen Y F, Mo C L, Fang W Q, Xiong C B, Dai J N andJiang F Y 2005 J. Cryst. Growth 284 459
[14] Maensiri S, Laokul P and Promarak V 2006 J. Cryst. Growth 289 102
[15] Chen C W, Chen K H and Shen C H et al 2006 Appl. Phys.Lett. 88 241905
Related articles from Frontiers Journals
[1] WANG Guo-Biao, XIONG Huan, LIN You-Xi, FANG Zhi-Lai, KANG Jun-Yong, DUAN Yu, SHEN Wen-Zhong. Green Emission from a Strain-Modulated InGaN Active Layer[J]. Chin. Phys. Lett., 2012, 29(6): 1738-1740
[2] LU Ran,JIANG Gen-Shan,LI Bin,ZHAO Quan-Liang,ZHANG De-Qing,YUAN Jie,CAO Mao-Sheng**. Electrical Properties of Lead Zirconate Titanate Thick Film Containing Micro- and Nano-Crystalline Particles[J]. Chin. Phys. Lett., 2012, 29(5): 1738-1740
[3] DING Bin-Feng. Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction[J]. Chin. Phys. Lett., 2012, 29(3): 1738-1740
[4] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 1738-1740
[5] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 1738-1740
[6] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 1738-1740
[7] LUO Bing-Cheng, CHEN Chang-Le**, FAN Fei, JIN Ke-Xin. The Photovoltaic Properties of BiFeO3La0.7Sr0.3MnO3 Heterostructures[J]. Chin. Phys. Lett., 2012, 29(1): 1738-1740
[8] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 1738-1740
[9] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 1738-1740
[10] YANG Lin-Hong, DONG Hong-Xing, SUN Zheng, SUN Liao-Xin, SHEN Xue-Chu, CHEN Zhang-Hai** . Temperature-Induced Phase Transition of In2O3 from a Rhombohedral Structure to a Body-Centered Cubic Structure[J]. Chin. Phys. Lett., 2011, 28(8): 1738-1740
[11] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 1738-1740
[12] LIU Hai-Tao, ZHONG Jia-Song, LIU Bing-Feng, LIANG Xiao-Juan, YANG Xin-Yu, JIN Huai-Dong, YANG Fan, XIANG Wei-Dong, ** . L-cystine-Assisted Growth and Mechanism of CuInS2 Nanocrystallines via Solvothermal Process[J]. Chin. Phys. Lett., 2011, 28(5): 1738-1740
[13] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 1738-1740
[14] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 1738-1740
[15] REN Guo-Zhong, LIU Yang, MA Hong-An, SU Tai-Chao, LIN Le-Jing, DENG Le, JIANG Yi-Ping, ZHENG Shi-Zhao, JIA Xiao-Peng** . Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT[J]. Chin. Phys. Lett., 2011, 28(4): 1738-1740
Viewed
Full text


Abstract