| Original Articles |
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Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application |
WU Liang-Cai;SONG Zhi-Tang;LIU Bo;RAO Feng;XU Cheng;ZHANG Ting,
YIN Wei-Jun;FENG Song-Lin |
| Nanotechnology Laboratory, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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WU Liang-Cai, SONG Zhi-Tang, LIU Bo et al 2007 Chin. Phys. Lett. 24 1103-1105 |
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Abstract We report the experimental phenomenon of large resistance change in
plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 260nm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering
and reactive ion etching. In current--voltage (I--V) measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state (HRS) to low-resistance state (LRS). In the I--V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0×10 -5 A and 2.5V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.
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| Keywords:
84.37.+q
85.50.-n
73.61.-r
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Received: 28 August 2006
Published: 26 March 2007
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| PACS: |
84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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73.61.-r
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(Electrical properties of specific thin films)
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