|
Multi-Electron Processes in 4.15--11.08keV/u13C6+ on Argon Collisions
RUAN Fang-Fang, CAI Xiao-Hong, YU De-Yang, LU Rong-Chun, SHAO Cao-Jie, LI Ming-Sheng, ZHANG Hong-Qiang, CUI Ying, SHAO Jian-Xiong, DING Bao-Wei, XUE Ying-Li, QI De-Jun, YANG Zhi-Hu, CHEN Xi-Meng
Chin. Phys. Lett. 2007, 24 (4):
921-924
.
The relative partial cross sections for 13C6+--Ar collisions at 4.15--11.08keV/u incident energy are measured. The cross-section ratios σ2E/σSC,σ3E/σSC, σ4E σSC and σ5EσSC are approximately the constants of 0.51±0.05, 0.20±0.03, 0.06±0.03 and 0.02±0.01 in this region. The significance of the multi-electron process in highly charged ions (HCIs) with argon collisions is demonstrated (σME/σSC as high as 0.79±0.06). In multi-electron processes, it is shown that transfer ionization is dominant while pure electron capture is weak and negligible. For all reaction channels, the cross-sections are independent of the incident energy in the present energy region, which is in agreement with the static characteristic of classic models, i.e. the molecular Coulomb over-the-barrier model (MCBM), the extended classical over-the-barrier model (ECBM) and the semiempirical scaling laws (SL). The result is compared with these classical models and with our previous work of 13C6+-Ne collisions [Chin. Phys. Lett. 23(2006)95].
|
|
Harmonic Mode-Locked Ytterbium-Doped Fibre Ring Laser
YANG Ling-Zhen, WANG Yun-Cai, CHEN Guo-Fu, WANG Yi-Shan, ZHAOWei
Chin. Phys. Lett. 2007, 24 (4):
944-946
.
We demonstrate a harmonic mode-locked ytterbium-doped fibre ring laser, which consists of a polarization-sensitive isolator, two polarization controllers, two 976nm laser diodes as the pump source and a two-segment ytterbium-doped fibre. Utilizing an additive pulse mode-locked technique based on nonlinear polarization evolution, the ytterbium-doped fibre laser can operate in mode-locked state by adjusting the position of polarization controllers. The cavity fundamental repetition rate is 23.78MHz. We also observe the second- and third-harmonic mode locking in the normal dispersion region, and their repetition rates are 47.66MHz and 71.56MHz, respectively. Over-driving of the saturable absorber in the harmonic mode-locking pulse is analysed and discussed in detail.
|
|
Effect of Ag Nanoparticles on Optical Properties of R6G Doped PMMA Films
DENG Yan, SUN You-Yi, WANG Pei, ZHANG Dou-Guo, JIAO Xiao-Jin, MIN Hai, ZHANG Qi-Jing, JIAO Yang, SUN Xiao-Quan
Chin. Phys. Lett. 2007, 24 (4):
954-956
.
The composite PMMA films containing Ag nanoparticles and rhodamine 6G are prepared. We investigate the fluorescence properties and nonlinear optical properties of R6G/PMMA films influenced by Ag nanoparticles. The fluorescence enhancement factor is about 3.3. The corresponding nonlinear refractive index is measured to be -2.423×10-8 esu using the Z-scan technique, which is much enhanced compared with the R6G/PMMA film. The results indicate that these enhancements are attributed to surface plasmon resonance of Ag nanoparticles.
|
|
Surface Light Extraction Mapping from Two-Dimensional Array of 12-Fold Photonic Quasicrystal on Current Injected GaN-Based LEDs
DAI Tao, ZHANG Bei, ZHANG Zhen-Sheng, LIU Dan, WANG Xiao, BAO Kui, KANGXiang-Ning, XU Jun, YU Da-Peng, ZHU Xing
Chin. Phys. Lett. 2007, 24 (4):
979-982
.
A two-dimensional array of dodecagonal photonic quasicrystal (12PQC) is fabricated on the surface of current injected GaN-based LEDs to out-couple guided modes. The spatially-resolved surface light extraction mapping of 12PQC is observed and compared with that of triangular lattice photonic crystal (3PC) by microscopic electrical luminescence and scanning near-field microscopy. The higher enhancement factor of 12PQC is obtained to be larger than that of 3PC. It is shown that 12PQC is more favourable and efficient for light extraction of guided lights.
|
|
Super-Resolution Recording by an Organic Photochromic Mask Layer
SHI Ming, ZHAO Sheng-Min, YI Jia-Xiang, ZHAO Fu-Qun, NIU Li-Hong, LI Zhong-Yu, ZHANG Fu-Shi
Chin. Phys. Lett. 2007, 24 (4):
994-997
.
By using the super-resolution near-field structure (super-RENS) method, the super-resolution recording marks are obtained practically by an organic photochromic diarylethene mask layer, under much lower recording laser power of 0.45mW. The size of recording marks is decreased by 60% (from 1.6μm to 0.7μm) for a diarylethene (photo-mode) recording layer by the optical detection method (limited by optical diffraction), or decreased by 97% (from 1600nm to 50nm) for a heptaoxyl copper phthalocyanine (thermo-optical) recording layer, the latter is much smaller than the limitation of optical diffraction. In order to obtain a desirable result, a proper extent of photochemistry reaction in the mask layer is needed. Thus, the super-resolution recording marks can be obtained by adjusting the concentration of diarylethene in the mask layer, the recording laser power, and the moving speed of the sample disc.
|
|
Growth and Characterization of InN Thin Films on Sapphire by MOCVD
XIE Zi-Li, ZHANG Rong, XIU Xiang-Qian, LIU Bin, LI Liang, HAN Ping, GU Shu-Lin, SHI Yi, ZHENG You-Dou
Chin. Phys. Lett. 2007, 24 (4):
1004-1006
.
Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition (MOCVD). By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, hotoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939cm2/Vs, and 3.9×1018cm-3, respectively.
|
|
Ab Initio Comparative Study of Zincblende and Wurtzite ZnO
ZHANG Xin-Yu, CHEN Zhou-Wen, QI Yan-Peng, FENG Yan, ZHAO Liang, QI Li, MA Ming-Zhen, LIU Ri-Ping, WANG Wen-Kui
Chin. Phys. Lett. 2007, 24 (4):
1032-1034
.
By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.
|
|
Fano Interference versus Kondo Effect in Strongly Correlated T-Shaped Quantum Dots Embedded in an Aharonov--Bohm Ring
CHEN Bao-Ju, CHEN Xiong-Wen, SHI Zhen-Gang, ZHU Xi-Xiang, SONG Ke-Hui, WU Shao-Quan
Chin. Phys. Lett. 2007, 24 (4):
1046-1049
.
We theoretically investigate the properties of the ground state of the strongly correlated T-shaped double quantum dots embedded in an Aharonov--Bohm ring in the Kondo regime by means of the one-impurity Anderson Hamiltonian. It is found that in this system, the persistent current depends sensitively on the parity and size of the ring. With the increase of interdot coupling, the persistent current is suppressed due to the enhancing Fano interference weakening the Kondo effect. Moreover, when the spin of quantum dot embedded in the Aharonov--Bohm ring is screened, the persistent current peak is not affected by interdot coupling. Thus this model may be a new candidate for detecting Kondo screening cloud.
|
|
Effects of Yb 3+ in Er 3+/Yb 3+ Codoped Fluorophosphate Glasses
LIAO Mei-Song, FANG Yong-Zheng, Hu Li-li, ZHANG Li-Yan, XU Shi-Qing
Chin. Phys. Lett. 2007, 24 (4):
1062-1065
.
For the Er3+/Yb3+ codoped fluorophosphate glasses, Judd--Ofelt theory is used to analyse the influence of YbF3 as not a sensitizer but an average component on the spectroscopic properties around 1530\,nm emission. The double roles of Yb3+, as a sensitizer and as an average component, are discussed. It is found that Yb3+ as an average component contributes to the increase of fluorescence lifetime, and Yb3+ as a sensitizer has the best sensitization when its concentration is 2.4mol%.
|
|
Fano Resonance in Landau Fermi and Luttinger Liquids
HAN Yue-Wu, LIU Yu-Liang, CAI Shao-Hong,
Chin. Phys. Lett. 2007, 24 (4):
1066-1069
.
With a two-channel model, we study the influence of temperature, external voltage and magnetic flux on the line shape of the Fano resonance, and show that in the Luttinger liquid case, the background transmittance and the asymmetric parameter depend strongly on the temperature and external voltage, while for the Landau Fermi liquid case they are nearly independent of these parameters in the low energy region. Moreover, we demonstrate that the asymmetric parameter changes periodically with an external magnetic flux, which is consistent with the recent experimental data.
|
|
Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell
HE Chun-Yuan, GAO Chun-Xiao, LI Ming, HAO Ai-Min, HUANG Xiao-Wei, ZHANG Dong-Mei, YU Cui-Ling, WANG Yue
Chin. Phys. Lett. 2007, 24 (4):
1070-1072
.
In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33GPa. The abnormal resistivity changes at about 3.8GPa and 10GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5GPa, 15.5GPa, 22.2GPa and about 30GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3GPa.
|
|
Room-Temperature Ferromagnetism in Zn 1-x MnxO Thin Films Deposited by Pulsed Laser Deposition
TENG Xiao-Yun, YU Wei, YANG Li-Hua, HAO Qiu-Yan, ZHANG Li, XU He-Ju, LIU Cai-Chi, FU Guang-Sheng
Chin. Phys. Lett. 2007, 24 (4):
1073-1075
.
Zn1-x MnxO (x=0.01--0.1) thin films with a Curie temperature above 300K are deposited on Al2O3 (0001) substrates by pulsed laser deposition. X-ray diffraction (XRD), ultraviolet (UV)-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device (SQUID). The results indicate that Mn doping introduces the incorporation of Mn2+ ions into the ZnO host matrix and the insertion of Mn2+ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-x MnxO films.
|
|
A Polydisperse Sphere Model Describing the Propagation of Light in Biological Tissue
WANG Qing-Hua, LI Zhen-Hua, LAI Jian-Cheng, HE An-Zhi
Chin. Phys. Lett. 2007, 24 (4):
1076-1079
.
A polydisperse sphere model with the complex refractive index is employed to describe the propagation of light in biological tissue. The scattering coefficient, absorption coefficient and scattering phase function are calculated. At the same time, the inverse problem on retrieving the particles size distribution, imaginary part of the refractive index and number density of scatterers is investigated. The result shows that the retrieval scheme together with the Chahine algorithm is effective in dealing with such an inverse problem. It is also clarified that a group of parameters including the scattering coefficient, absorption coefficient and phase function are associated with another group including the refractive index, particle size distribution and number density of scatterers, which is a problem described in two different ways and the anisotropy factor is not an independent variable, but is determined by the phase function.
|
|
Spectral Hole-Burning of Eu3+ :Y2SiO5 Crystal at 16K
XUE Shao-Lin, YU Mu-Huo, CHEN Ling-Bing, ZHAO You-Yuan, LI Fu-Ming, ZHANG Shou-Du, WANG Hao-Bing
Chin. Phys. Lett. 2007, 24 (4):
1080-1083
.
By using an Ar+ ion laser, a tunable Rh 6G dye laser (linewidth 0.5cm-1) pumped by the second harmonic of a YAG:Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu3+-doped Y2SiO 5 crystal. Persistent spectral hole burning (PSHB) are observed in the Eu 3+ ions spectral lines (5D0- 7F0 transition) in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1s spectral holes with hole width about 80MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.
|
|
Chemical Synthesis of C3N and BC2N Compounds
SUN Guang, LIU Zhong-Yuan, HE Ju-Long, YU Dong-Li, TIAN Yong-Jun
Chin. Phys. Lett. 2007, 24 (4):
1092-1094
.
A chemical reaction for the preparation of B--C--N compounds by using carbon tetrachloride (CCl4), boron tribromide (BBr3), lithium nitride (Li3N) and sodium as reactants has been carried out at the temperature of 400°C. Measurements of FTIR, XRD, TEM and EELS show that two kinds of compounds have been formed in the prepared sample. One is hollow sphere-like C--N with an amorphous structure; the other is piece-like polycrystalline B--C--N with the hexagonal structure. Their determined compositions are close to C3N and BC2N, respectively.
|
|
Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application
WU Liang-Cai, SONG Zhi-Tang, LIU Bo, RAO Feng, XU Cheng, ZHANG Ting, YIN Wei-Jun, FENG Song-Lin
Chin. Phys. Lett. 2007, 24 (4):
1103-1105
.
We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 260nm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current--voltage (I--V) measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state (HRS) to low-resistance state (LRS). In the I--V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0×10 -5 A and 2.5V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.
|
77 articles
|